V23990-K249-A-PM Datasheet, PDF (10/17 Pages) Vincotech – IGBT3 technology for low saturation losses

V23990-K249-A-PM
T1,T2,T3,T4,T5,T6,T7 / D1,D2,D3,D4,D5,D6,D7
Figure 25
Safe operating area as a function
of collector-emitter voltage
I_C = f(V_CE)
10³
T1,T2,T3,T4,T5,T6,T7 IGBT
100mS
10mS
10²
DC
1mS
100uS
10¹
10⁰
10^-1
10⁰
At
D=
T_h =
V_GE =
T_j =
10¹
single pulse
80
ºC
±15
V
T_jmax
ºC
10²
V CE (V)
10³
Figure 26
Gate voltage vs Gate charge
V_GE = f(Q_GE)
20
17,5
15
12,5
10
7,5
5
2,5
0
0
At
I_C =
70
50
140
A
T1,T2,T3,T4,T5,T6,T7 IGBT
240V
960V
210
280
350
420
Q g (nC)
Copyright by Vincotech
10
Revision: 2.1