V23990-K249-A-PM Datasheet, PDF (5/17 Pages) Vincotech – IGBT3 technology for low saturation losses

V23990-K249-A-PM
T1,T2,T3,T4,T5,T6,T7 / D1,D2,D3,D4,D5,D6,D7
Figure 5
Typical switching energy losses
as a function of collector current
E = f(I_C)
12,0
9,0
T1,T2,T3,T4,T5,T6,T7 IGBT
E_{on High T}
E_{off High T}
Figure 6
Typical switching energy losses
as a function of gate resistor
E = f(R_G)
12,0
9,0
T1,T2,T3,T4,T5,T6,T7 IGBT
E_{on High T}
6,0
6,0
E_{off High T}
3,0
3,0
0,0
0
15
30
45
60
75
90 I C (A) 105
0,0
0
10
20
30
40
R G ( Ω ) 50
With an inductive load at
T_j =
125
°C
V_CE =
600
V
V_GE =
±15
V
R_gon =
18
Ω
R_goff =
18
Ω
With an inductive load at
T_j =
125
°C
V_CE =
600
V
V_GE =
±15
V
I_C =
50
A
Figure 7
Typical reverse recovery energy loss
as a function of collector current
E_rec = f(I_C)
8
T1,T2,T3,T4,T5,T6,T7 IGBT
E_rec
Figure 8
Typical reverse recovery energy loss
as a function of gate resistor
E_rec = f(R_G)
8
T1,T2,T3,T4,T5,T6,T7 IGBT
6
6
T_j = T_jmax -25°C
T_j = T_jmax -25°C
E_rec
4
4
2
2
0
0
0
15
30
45
60
75
90 I C (A) 105
0
10
20
30
40 R G ( Ω ) 50
With an inductive load at
T_j =
125
°C
V_CE =
600
V
V_GE =
±15
V
R_gon =
18
Ω
With an inductive load at
T_j =
125
°C
V_CE =
600
V
V_GE =
±15
V
I_C =
50
A
Copyright by Vincotech
5
Revision: 2.1