V23990-K249-A-PM Datasheet, PDF (6/17 Pages) Vincotech – IGBT3 technology for low saturation losses

V23990-K249-A-PM
T1,T2,T3,T4,T5,T6,T7 / D1,D2,D3,D4,D5,D6,D7
Figure 9
Typical switching times as a
function of collector current
t = f(I_C)
1
0,1
0,01
T1,T2,T3,T4,T5,T6,T7 IGBT
t_doff
t_f
t_don
t_r
Figure 10
Typical switching times as a
function of gate resistor
t = f(R_G)
1
0,1
0,01
T1,T2,T3,T4,T5,T6,T7 IGBT
t_doff
t_f
t_don
t_r
0,001
0
15
30
45
60
75
90 I C (A) 105
0,001
0
10
20
30
40 R G ( Ω ) 50
With an inductive load at
T_j =
125
°C
V_CE =
600
V
V_GE =
±15
V
R_gon =
18
Ω
R_goff =
18
Ω
With an inductive load at
T_j =
125
°C
V_CE =
600
V
V_GE =
±15
V
I_C =
50
A
Figure 11
Typical reverse recovery time as a
function of collector current
t_rr = f(I_C)
0,8
D1,D2,D3,D4,D5,D6,D7 FWD
Figure 12
Typical reverse recovery time as a
function of IGBT turn on gate resistor
t_rr = f(R_gon)
0,8
D1,D2,D3,D4,D5,D6,D7 FWD
t_rr
0,6
0,6
T_j = T_jmax -25°C
0,4
0,4
t_rr
T_j = T_jmax -25°C
0,2
0,2
0,0
0
30
60
At
T_j =
125
°C
V_CE =
600
V
V_GE =
±15
V
R_gon =
18
Ω
90
I C (A) 120
0,0
0
10
20
30
40 R _{g on} ( Ω ) 50
At
T_j =
125
°C
V_R =
600
V
I_F =
50
A
V_GE =
±15
V
Copyright by Vincotech
6
Revision: 2.1