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| 10-PZ123BA080ME-M909L18Y Datasheet, PDF (8/16 Pages) Vincotech – Ultra Low Inductance with integrated DC-capacitors | |||
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10-PZ123BA080ME-M909L18Y
T1, T2, T3, T4, T5, T6 / D1, D2, D3, D4, D5, D6
Figure 17
Typical rate of fall of forward
and reverse recovery current as a
function of collector current
dI0/dt,dIrec/dt = f(Ic)
6000
5000
dI0/dt
dIrec/dt
D1, D2, D3, D4, D5, D6 FWD
4000
3000
2000
1000
0
0
5
10
15
20
25 I C (A) 30
At
Tj =
VCE =
VGE =
Rgon =
25/125 °C
700
V
16
V
4
â¦
Figure 19
T1, T2, T3, T4, T5, T6 MOSFET
IGBT/MOSFET transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
101
Figure 18
Typical rate of fall of forward
and reverse recovery current as a
function of IGBT turn on gate resistor
dI0/dt,dIrec/dt = f(Rgon)
6000
5000
D1, D2, D3, D4, D5, D6 FWD
dI0/dt
dIrec/dt
4000
3000
2000
1000
0
0
5
10
15
At
Tj =
VR =
IF =
VGS =
25/125 °C
700
V
16
A
16
V
Figure 20
FWD transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
101
20
25
30 R Gon ( â¦) 35
D1, D2, D3, D4, D5, D6 FWD
100
100
10-1
10-2
10-5
10-4
10-3
10-2
At
D=
RthJH =
tp / T
1,72
K/W
IGBT thermal model values
R (C/W)
1,42E-01
7,14E-01
5,71E-01
1,68E-01
1,23E-01
Tau (s)
1,02E+00
1,29E-01
5,47E-02
3,53E-03
5,32E-04
D = 0,5
0,2
10-1
0,1
0,05
0,02
0,01
0,005
0.000
10-2
10-1
100
t p (s)
110012
10-5
10-4
10-3
10-2
At
D=
RthJH =
tp / T
1,88
K/W
FWD thermal model values
R (C/W)
5,58E-02
1,47E-01
8,94E-01
4,33E-01
2,94E-01
5,99E-02
Tau (s)
6,96E+00
5,43E-01
7,92E-02
1,33E-02
3,03E-03
6,32E-04
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
10-1
100
t p (s) 110012
copyright Vincotech
8
Revision: 2
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