10-PZ123BA080ME-M909L18Y Datasheet, PDF (1/16 Pages) Vincotech – Ultra Low Inductance with integrated DC-capacitors

flow 3xBOOST0-SiC
Features
● SiC-Power MOSFET´s and Schottky Diodes
● 3 channel boost topology
● Ultra Low Inductance with integrated DC-capacitors
● Switching frequency >100kHz
●Temperature sensor
Target Applications
● solar inverter
● Power Supply
Types
● 10-PZ123BA080ME-M909L18Y
10-PZ123BA080ME-M909L18Y
1200V/80mΩ
flow 0 12mm housing
Schematic
Tj=25°C, unless otherwise specified
Parameter
T1, T2, T3, T4, T5, T6
Drain to source breakdown voltage
DC drain current
Pulsed drain current
Power dissipation
Gate-source peak voltage
Maximum Junction Temperature
D1, D2, D3, D4, D5, D6
Peak Repetitive Reverse Voltage
Forward average current
Non-Repetitive Peak Forward Surge Current
Repetitive Peak Forward Surge Current
Power dissipation per Diode
Maximum Junction Temperature
Maximum Ratings
Symbol
Condition
V_DS
I_D
I_Dpulse
P_tot
V_GS
T_jmax
T_j=T_jmax
t_p limited by T_jmax
T_j=T_jmax
T_h=80°C
T_c=80°C
T_h=80°C
T_c=80°C
V_RRM
I_FAV
I_FSM
I_FRM
P_tot
T_jmax
T_j=T_jmax
t_p=10ms
t_p limited by T_jmax
T_j=T_jmax
T_h=80°C
T_c=80°C
T_j=25°C
T_h=80°C
T_c=80°C
Value
Unit
1200
V
17
A
21
60
A
41
W
62
-10/25
V
150
°C
1200
V
17
A
21
92
A
52
A
50
W
76
175
°C
copyright Vincotech
1
Revision: 2