10-PZ123BA080ME-M909L18Y Datasheet, PDF (5/16 Pages) Vincotech – Ultra Low Inductance with integrated DC-capacitors

10-PZ123BA080ME-M909L18Y
T1, T2, T3, T4, T5, T6 / D1, D2, D3, D4, D5, D6
Figure 5
Typical switching energy losses
as a function of collector current
E = f(I_D)
0,25
0,20
0,15
0,10
0,05
T1, T2, T3, T4, T5, T6 MOSFET
E_{on Low T}
E_{on High T}
E_{off High T}
E_{off Low T}
Figure 6
Typical switching energy losses
as a function of gate resistor
E = f(R_G)
0,5
0,4
0,3
0,2
0,1
T1, T2, T3, T4, T5, T6 MOSFET
E_{on Low T}
E_{on High T}
E_{off High T}
E_{off Low T}
0,00
0
5
10
15
20
25 _{I C (A)} 30
With an inductive load at
T_j =
V_DS =
V_GS =
R_gon =
R_goff =
25/125 °C
700
V
16
V
4
Ω
4
Ω
Figure 7
D1, D2, D3, D4, D5, D6 FWD
Typical reverse recovery energy loss
as a function of collector (drain) current
E_rec = f(I_c)
0,05
0,04
E_{rec High T}
0,03
E_{rec Low T}
0
0
10
20
With an inductive load at
T_j =
V_DS =
V_GS =
I_D =
25/125 °C
700
V
16
V
16
A
30
R _G ( Ω ) 40
Figure 8
Typical reverse recovery energy loss
as a function of gate resistor
E_rec = f(R_G)
0,05
D1, D2, D3, D4, D5, D6 FWD
E_{rec Low T}
0,04
E_{rec High T}
0,03
0,02
0,02
0,01
0,01
0
0
0
5
10
15
20
25 _{I C (A)} 30
0
10
20
With an inductive load at
T_j =
25/125 °C
V_DS =
700
V
V_GS =
16
V
R_gon =
4
Ω
R_goff =
4
Ω
With an inductive load at
T_j =
25/125 °C
V_DS =
700
V
V_GS =
16
V
I_D =
16
A
30
R_G(Ω )
40
copyright Vincotech
5
Revision: 2