10-PZ123BA080ME-M909L18Y Datasheet, PDF (10/16 Pages) Vincotech – Ultra Low Inductance with integrated DC-capacitors

10-PZ123BA080ME-M909L18Y
T1, T2, T3, T4, T5, T6 / D1, D2, D3, D4, D5, D6
Figure 25
Safe operating area as a function
of drain-source voltage
I_D = f(V_DS)
10³
T1, T2, T3, T4, T5, T6 MOSFET
10²
100mS
10¹
10⁰
10uS
1mS
100uS
DC
10mS
10⁰
10¹
10²
At
D=
T_h =
V_GS =
T_j =
single pulse
80
ºC
16
V
T_jmax
ºC
10³
V DS (V)
Figure 26
Gate voltage vs Gate charge
V_GS = f(Qg)
20
18
16
14
12
10
8
6
4
2
0
0
At
I_DS =
V_DS=
I_GS=
T_j =
10
20
20
A
800
V
10
mA
25
ºC
T1, T2, T3, T4, T5, T6 MOSFET
4
30
40 _{Qg (nC)} 50
copyright Vincotech
10
Revision: 2