10-PZ123BA080ME-M909L18Y Datasheet, PDF (7/16 Pages) Vincotech – Ultra Low Inductance with integrated DC-capacitors

10-PZ123BA080ME-M909L18Y
T1, T2, T3, T4, T5, T6 / D1, D2, D3, D4, D5, D6
Figure 13
Typical reverse recovery charge as a
function of collector current
Q_rr = f(I_C)
0,15
0,12
D1, D2, D3, D4, D5, D6 FWD
Q_{rr High T}
Q_{rr Low T}
0,09
0,06
0,03
0
0
At
5
10
15
20
25 _{I C (A)} 30
At
T_j =
V_CE =
V_GE =
R_gon =
25/125 °C
700
V
16
V
4
Ω
Figure 14
Typical reverse recovery charge as a
function of IGBT turn on gate resistor
Q_rr = f(R_gon)
0,12
0,10
D1, D2, D3, D4, D5, D6 FWD
Q_{rr Low T}
Q_{rr High T}
0,08
0,06
0,04
0,02
0,00
0
5
10
15
20
25
30
35
R Gon ( Ω)
At
Tj =
VR =
IF =
VGS =
25/125 °C
700
V
16
A
16
V
Figure 15
Typical reverse recovery current as a
function of collector current
I_RRM = f(I_C)
25
20
D1, D2, D3, D4, D5, D6 FWD
I_{RRM High T}
I_{RRM Low T}
15
Figure 16
Typical reverse recovery current as a
function of IGBT turn on gate resistor
I_RRM = f(R_gon)
25
D1, D2, D3, D4, D5, D6 FWD
20
15
10
10
I_{RRM High T}
5
5
I_{RRM Low T}
0
0
5
10
15
20
25
30
I C (A)
0
0
5
10
15
20
25
30
35
R Gon ( Ω)
At
T_j =
V_CE =
V_GE =
R_gon =
25/125 °C
700
V
16
V
4
Ω
At
T_j =
V_R =
I_F =
V_GS =
25/125 °C
700
V
16
A
16
V
copyright Vincotech
7
Revision: 2