10-PZ123BA080ME-M909L18Y Datasheet, PDF (4/16 Pages) Vincotech – Ultra Low Inductance with integrated DC-capacitors

10-PZ123BA080ME-M909L18Y
T1, T2, T3, T4, T5, T6 / D1, D2, D3, D4, D5, D6
Figure 1
Typical output characteristics
I_D = f(V_DS)
T1, T2, T3, T4, T5, T6 MOSFET
70
60
50
40
30
20
10
0
0
2
4
6
At
t_p =
T_j =
V_GS from
250
µs
25
°C
0 V to 20 V in steps of 2 V
8
10
12
V CE (V)
Figure 2
Typical output characteristics
I_D = f(V_DS)
T1, T2, T3, T4, T5, T6 MOSFET
70
60
50
40
30
20
10
0
0
2
4
6
At
t_p =
T_j =
V_GS from
250
µs
126
°C
0 V to 20 V in steps of 2 V
8
10 _{V CE (V)} 12
Figure 3
Typical transfer characteristics
I_D = f(V_GS)
20
T1, T2, T3, T4, T5, T6 MOSFET
Figure 4
Typical diode forward current as
a function of forward voltage
I_F = f(V_F)
40
D1, D2, D3, D4, D5, D6 FWD
16
12
8
T_j = T_jmax-25°C
4
0
0
2
4
6
At
t_p =
250
µs
V_DS =
10
V
30
20
T_j = 25°C
8
10 _{V GS (V)} 12
10
T_j = 25°C
0
0
At
t_p =
1
250
T_j = T_jmax-25°C
2
3
µs
4
V F (V) ⁵
copyright Vincotech
4
Revision: 2