10-PZ123BA080ME-M909L18Y Datasheet, PDF (6/16 Pages) Vincotech – Ultra Low Inductance with integrated DC-capacitors

10-PZ123BA080ME-M909L18Y
T1, T2, T3, T4, T5, T6 / D1, D2, D3, D4, D5, D6
Figure 9
Typical switching times as a
function of collector current
t = f(I_D)
1
T1, T2, T3, T4, T5, T6 MOSFET
Figure 10
Typical switching times as a
function of gate resistor
t = f(R_G)
1
T1, T2, T3, T4, T5, T6 MOSFET
t_f
0,1
t_doff
0,1
t_doff
t_don
0,01
t_r
t_f
0,01
t_don
t_r
0,001
0
0,001
5
10
15
20
25
I D (A) ³⁰
0
5
10
15
20
25
30
35
R G ( Ω)
With an inductive load at
T_j =
125
°C
V_DS =
700
V
V_GS =
16
V
R_gon =
4
Ω
R_goff =
4
Ω
With an inductive load at
T_j =
125
°C
V_DS =
700
V
V_GS =
16
V
I_C =
16
A
Figure 11
Typical reverse recovery time as a
function of collector current
t_rr = f(Ic)
0,015
0,012
t_{rr High T}
t_{rr Low T}
0,009
0,006
0,003
D1, D2, D3, D4, D5, D6 FWD
Figure 12
Typical reverse recovery time as a
function of IGBT turn on gate resistor
t_rr = f(R_gon)
0,08
D1, D2, D3, D4, D5, D6 FWD
0,06
t_{rr Low T}
0,04
t_{rr High T}
0,02
0
0
5
10
15
20
25 _{I C (A)} 30
0
0
5
10
15
20
25
30
35
R Gon ( Ω)
At
T_j =
V_CE =
V_GE =
R_gon =
25/125 °C
700
V
16
V
4
Ω
At
T_j =
V_R =
I_F =
V_GS =
25/125 °C
700
V
16
A
16
V
copyright Vincotech
6
Revision: 2