30-FT12NMA160SH-M669F08 Datasheet, PDF (7/31 Pages) Vincotech – Common collector neutral connection

30-FT12NMA160SH-M669F08
Figure 5
Typical switching energy losses
as a function of collector current
E = f(I_C)
8
6
4
2
Half Bridge
Half Bridge IGBT and Neutral Point FWD
IGBT
E_{off High T}
E_{on High T}
Figure 6
Typical switching energy losses
as a function of gate resistor
E = f(R_G)
8
6
E_{off Low T}
4
E_{on Low T}
2
0
0
50
100
With an inductive load at
T_j =
V_CE =
V_GE =
R_gon =
R_goff =
25/125 °C
350
V
±15
V
4
Ω
4
Ω
Figure 7
Typical reverse recovery energy loss
as a function of collector current
E_rec = f(I_c)
1,6
1,2
0
150
I C (A)
200
0
4
8
12
With an inductive load at
T_j =
V_CE =
V_GE =
I_C =
25/125 °C
350
V
±15
V
100
A
NP FWD
E_{rec High T}
Figure 8
Typical reverse recovery energy loss
as a function of gate resistor
E_rec = f(R_G)
1,6
1,2
0,8
0,8
E_{rec Low T}
0,4
0,4
0
0
0
40
80
120
160
I C (A) ²⁰⁰
0
4
8
12
With an inductive load at
T_j =
25/125 °C
V_CE =
350
V
V_GE =
±15
V
R_gon =
4
Ω
With an inductive load at
T_j =
25/125 °C
V_CE =
350
V
V_GE =
±15
V
I_C =
100
A
IGBT
E_{on High T}
E_{on Low T}
E_{off High T}
E_{off Low T}
16 _{R G ( Ω)} 20
NP FWD
E_{rec High T}
E_{rec Low T}
16
R G ( Ω) 20
copyright by Vincotech
7
Revision: 2