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30-FT12NMA160SH-M669F08 Datasheet, PDF (22/31 Pages) Vincotech – Common collector neutral connection
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30-FT12NMA160SH-M669F08
Half Bridge Inverse Diode
Figure 1
Typical FWD forward current as
a function of forward voltage
IF= f(VF)
30
Halfbridge IGBT Inverse Diode
25
20
15
10
5
0
0
At
tp =
Tj = Tjmax-25°C
Tj = 25°C
1
2
250
µs
3
V F (V)
4
Figure 2
FWD transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
101
Halfbridge IGBT Inverse Diode
100
10-1
10-2
10-5
10-4
10-3
10-2
At
D=
RthJH =
tp / T
1,77
K/W
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
10-1
100
t p (s)
10110
Figure 3
Power dissipation as a
function of heatsink temperature
Ptot = f(Th)
100
Halfbridge IGBT Inverse Diode
80
60
40
20
0
0
50
100
At
Tj =
150
ºC
150
T h ( o C) 200
Figure 4
Forward current as a
function of heatsink temperature
IF = f(Th)
30
Halfbridge IGBT Inverse Diode
25
20
15
10
5
0
0
50
100
At
Tj =
150
ºC
150
T h ( o C)
200
copyright by Vincotech
22
Revision: 2
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