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| 30-FT12NMA160SH-M669F08 Datasheet, PDF (10/31 Pages) Vincotech – Common collector neutral connection | |||
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30-FT12NMA160SH-M669F08
Figure 17
Typical rate of fall of forward
and reverse recovery current as a
function of collector current
dI0/dt,dIrec/dt = f(Ic)
14000
12000
dIrec/dt T
dI0/dt T
10000
8000
6000
4000
2000
0
0
40
80
At
Tj =
VCE =
VGE =
Rgon =
25/125 °C
350
V
±15
V
4
â¦
Half Bridge
Half Bridge IGBT and Neutral Point FWD
NP FWD
Figure 18
Typical rate of fall of forward
and reverse recovery current as a
function of JFET turn on gate resistor
dI0/dt,dIrec/dt = f(Rgon)
30000
25000
NP FWD
dI0/dt T
dIrec/dt T
20000
15000
10000
5000
120
160
I C (A) 200
0
0
4
8
12
16 R gon ( â¦) 20
At
Tj =
VR =
IF =
VGE =
25/125 °C
350
V
100
A
±15
V
Figure 19
IGBT transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
101
IGBT
Figure 20
FWD transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
100
NP FWD
100
10-1
10-1
D = 0,5
D = 0,5
0,2
10-2
0,2
0,1
0,1
10-2
0,05
0,05
0,02
0,02
0,01
0,01
0,005
0,005
0.000
0.000
10-3
10-3
10-5
10-4
10-3
10-2
10-1
100
t p (s)
101
10-5
10-4
10-3
10-2
10-1
100
t p (s) 101
At
At
D=
RthJH =
tp / T
0,24
K/W
D=
RthJH =
tp / T
0,64
K/W
IGBT thermal model values
FWD thermal model values
R (C/W)
0,08
0,06
0,07
0,02
0,01
Tau (s)
2,26
0,29
0,05
0,01
0,002
R (C/W)
0,17
0,11
0,08
0,20
0,04
0,03
Tau (s)
3,90
0,85
0,18
0,04
0,01
0,001
copyright by Vincotech
10
Revision: 2
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