30-FT12NMA160SH-M669F08 Datasheet, PDF (12/31 Pages) Vincotech – Common collector neutral connection

30-FT12NMA160SH-M669F08
Figure 25
Safe operating area as a function
of collector-emitter voltage
I_C = f(V_CE)
Half Bridge
Half Bridge IGBT and Neutral Point FWD
IGBT
Figure 26
Gate voltage vs Gate charge
V_GE = f(Q_g)
17,5
IGBT
15
10³
1mS
100uS
12,5
240V
10²
960V
10
10mS
10¹
100mS
7,5
DC
10⁰
5
10^-1
10⁰
10¹
10²
At
D=
Th =
V_GE =
T_j =
single pulse
80
ºC
±15
V
T_jmax
ºC
2,5
10³
V CE (V)
0
0
100
200
300
400
500
600
700
800
Q g (nC)
At
I_D =
160
A
T_j=
25
ºC
Figure 27
Short circuit withstand time as a function of
gate-emitter voltage
t_sc = f(V_GE)
17,5
Output inverter IGBT
15
12,5
10
7,5
5
2,5
0
12
13
14
15
16
17
18
19
20
V GE (V)
At
V_CE =
1200
V
T_j ≤
175
ºC
Figure 28
Output inverter IGBT
Typical short circuit collector current as a function of
gate-emitter voltage
V_GE = f(Q_GE)
1200
1000
800
600
400
200
0
12
13
14
15
16
17
18
19 _{V GE (V)} 20
At
V_CE ≤
1200
V
T_j =
175
ºC
copyright by Vincotech
12
Revision: 2