30-FT12NMA160SH-M669F08 Datasheet, PDF (4/31 Pages) Vincotech – Common collector neutral connection

Parameter
Half Bridge IGBT Inverse Diode
Forward voltage
Threshold voltage (for power loss calc. only)
Slope resistance (for power loss calc. only)
Reverse current
Thermal resistance chip to heatsink per chip
Thermal resistance chip to case per chip
Halfbridge IGBT
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current incl. Diode
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Thermal resistance chip to heatsink per chip
Thermal resistance chip to case per chip
Neutral Point FWD
Diode forward voltage
Peak reverse recovery current
Reverse recovery time
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovered energy
Thermal resistance chip to heatsink per chip
Thermal resistance chip to case per chip
Neutral Point IGBT
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off incl diode
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Thermal resistance chip to heatsink per chip
Thermal resistance chip to case per chip
copyright by Vincotech
30-FT12NMA160SH-M669F08
Characteristic Values
Symbol
VGE [V] or
VGS [V]
Conditions
Vr [V] or
VCE [V] or
VDS [V]
IC [A] or
IF [A] or
ID [A]
Vf
Vto
rt
Ir
RthJH
RthJC
Thermal grease
thickness≤50um
λ = 1 W/mK
7
7
7
1200
VGE(th)
VCE(sat)
ICES
IGES
Rgint
td(ON)
tr
td(OFF)
tf
Eon
Eoff
Cies
Coss
Crss
QGate
RthJH
RthJC
VCE=VGE
15
0
20
Rgoff=4 Ω
Rgon=4 Ω
±15
f=1MHz
0
15
Thermal grease
thickness≤50um
λ = 1 W/mK
1200
0
0,006
160
350
100
25
960 160
VF
120
IRRM
trr
Qrr Rgon=4 Ω
±15
350
100
di(rec)max
/dt
Erec
RthJH
RthJC
Thermal grease
thickness≤50um
λ = 1 W/mK
VGE(th) VCE=VGE
0,0016
VCE(sat)
15
100
ICES
0
600
IGES
20
0
Rgint
td(on)
tr
td(off)
tf
Rgoff=4 Ω
Rgon=4 Ω
±15
350
100
Eon
Eoff
Cies
Coss f=1MHz
0
25
Crss
QGate
15
480
100
RthJH
RthJC
Thermal grease
thickness≤50um
λ = 1 W/mK
Value
Unit
Tj
Min
Typ
Max
Tj=25°C
Tj=125°C
1
1,97
3,4
1,65
V
Tj=25°C
1,33
Tj=125°C
1,01
V
Tj=25°C
Tj=125°C
91
91
mΩ
Tj=25°C
Tj=125°C
0,25
mA
1,77
K/W
1,17
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
5,2
5,8
6,5
V
2
2,02
2,4
2,37
V
0,02
mA
480
nA
none
Ω
133
135
20
23
225
ns
276
38
64
1,80
3,18
2,52
mWs
4,03
9200
920
pF
540
740
nC
0,24
K/W
0,16
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
1,47
1,7
1,29
V
127
151
A
40
81
ns
3,02
7,13
µC
12386
3767
A/µs
0,31
1,01
mWs
0,64
K/W
0,42
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
5
5,8
6,5
V
1,05
1,58
1,85
1,8
V
0,0052
mA
1200
nA
none
Ω
103
103
17
19
158
ns
179
44
64
1,06
1,52
2,48
µWs
3,32
6280
400
pF
186
620
nC
0,54
K/W
0,36
4
Revision: 2