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30-FT12NMA160SH-M669F08 Datasheet, PDF (18/31 Pages) Vincotech – Common collector neutral connection
30-FT12NMA160SH-M669F08
Figure 17
Typical rate of fall of forward
and reverse recovery current as a
function of collector current
dI0/dt,dIrec/dt = f(Ic)
10000
dI0/dt T
dIrec/dt T
8000
6000
4000
2000
0
0
50
100
At
Tj =
VCE =
VGE =
Rgon =
25/125 °C
350
V
±15
V
4
Ω
Figure 19
IGBT transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
101
100
Neutral Point IGBT
Neutral Point IGBT and Half Bridge FWD
FWD
Figure 18
Typical rate of fall of forward
and reverse recovery current as a
function of IGBT turn on gate resistor
dI0/dt,dIrec/dt = f(Rgon)
18000
15000
FWD
dIrec/dt T
dI0/dt T
12000
9000
6000
3000
150
I C (A) 200
0
0
4
8
12
At
Tj =
VR =
IF =
VGE =
25/125 °C
350
V
100
A
±15
V
NP IGBT
Figure 20
FWD transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
101
16 R gon ( Ω) 20
FWD
100
10-1
10-2
10-3
10-5
10-4
10-3
10-2
At
D=
RthJH =
tp / T
0,54
K/W
IGBT thermal model values
R (C/W)
0,11
0,09
0,12
0,17
0,03
Tau (s)
2,87
0,46
0,10
0,02
0,004
10-1
D = 0,5
0,2
0,1
0,05
10-2
0,02
0,01
0,005
0.000
10-3
10-1
100
t p (s) 101 10
10-5
10-4
10-3
10-2
At
D=
RthJH =
tp / T
0,74
K/W
FWD thermal model values
R (C/W)
0,07
0,10
0,20
0,26
0,07
Tau (s)
3,67
0,54
0,10
0,03
0,005
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
10-1
100
t p (s) 101 10
copyright by Vincotech
18
Revision: 2