30-FT12NMA160SH-M669F08 Datasheet, PDF (17/31 Pages) Vincotech – Common collector neutral connection

30-FT12NMA160SH-M669F08
Figure 13
Typical reverse recovery charge as a
function of collector current
Q_rr = f(I_C)
18
15
12
9
6
3
0
0
At
50
100
At
T_j =
V_CE =
V_GE =
R_gon =
25/125 °C
350
V
±15
V
4
Ω
Figure 15
Typical reverse recovery current as a
function of collector current
I_RRM = f(I_C)
180
150
120
90
60
30
0
0
50
100
At
T_j =
V_CE =
V_GE =
R_gon =
25/125 °C
350
V
±15
V
4
Ω
Neutral Point IGBT
Neutral Point IGBT and Half Bridge FWD
FWD
Figure 14
Typical reverse recovery charge as a
function of IGBT turn on gate resistor
Q_rr = f(R_gon)
15
Q_{rr High T}
12
9
Q_{rr Low T}
6
3
0
150
I C (A)
200
0
4
8
12
At
T_j =
V_R =
I_F =
V_GE =
25/125 °C
350
V
100
A
±15
V
FWD
I_{RRM High T}
I_{RRM Low T}
Figure 16
Typical reverse recovery current as a
function of IGBT turn on gate resistor
I_RRM = f(R_gon)
200
160
120
80
40
0
150
I C (A)
200
0
4
8
12
At
T_j =
V_R =
I_F =
V_GE =
25/125 °C
350
V
100
A
±15
V
FWD
Q_{rr High T}
Q_{rr Low T}
16 _{R gon ( Ω)} 20
FWD
I_{RRM High T}
I_{RRM Low T}
16
R gon ( Ω) ²⁰
copyright by Vincotech
17
Revision: 2