30-F212PMA100M701-L880A70 Datasheet, PDF (30/35 Pages) Vincotech – Compact and low inductive design

30-F212PMA100M701-L880A70
datasheet
Brake Switching Definitions
General conditions
Tj
R gon
= 125 °C
= 8Ω
R goff
= 8Ω
figure 1.
Turn-of f Swit ching Wavef orms & def init ion of t dof f , t Eof f (t Eof f = int egrat ing t ime f or Eof f )
125
%
t_doff
IGBT
100
V_{GE 90%}
V_{CE 90%}
75
V_GE
I_C
50
t_Eoff
25
V_CE
0
I_{C 1%}
figure 2.
Turn-on Swit ching Wavef orms & def init ion of tdon, t Eon (t Eon = int egrating t ime f or Eon)
200
%
I_C
150
100
V_CE
t_don
50
V_{GE 10%}
0
V_GE
I_{C 10%}
t_Eon
V_{CE 3%}
IGBT
-25
-0,2
0
0,2
0,4
V GE (0%) =
V GE (100%) =
V C (100%) =
I C (100%) =
t doff =
t Eoff =
figure 3.
- 15
V
15
V
600
V
50
A
0,262
μs
0,616
μs
Turn-of f Swit ching Wavef orms & def init ion of t f
125
%
I_C
100
fitted
V_CE
I_{C 90%}
75
I_{C 60%}
50
I_{C 40%}
25
I_C10%
0
t_f
-25
0,01
0,1
0,19
0,28
0,37
V C (100%) =
I C (100%) =
tf =
600
V
50
A
0,119
μs
0,6
0,8
t (µs)
IGBT
0,46
0,55
t ( µs)
-50
2,9
3
3,1
3,2
V GE (0%) =
V GE (100%) =
V C (100%) =
I C (100%) =
t don =
t Eon =
figure 4.
- 15
V
15
V
600
V
50
A
0,096
μs
0,401
μs
Turn-on Swit ching Wavef orms & def init ion of tr
175
%
I_C
150
125
100
V_CE
I_{C 90%}
75
t_r
50
25
I_{C 10%}
0
-25
3
V C (100%) =
I C (100%) =
tr =
3,1
3,2
600
V
50
A
0,030
μs
3,3
3,4
3,5
t (µs)
IGBT
3,3
3,4
t (µs)
Copyright Vincotech
30
17 Okt. 2016 / Revision 2