30-F212PMA100M701-L880A70 Datasheet, PDF (20/35 Pages) Vincotech – Compact and low inductive design

30-F212PMA100M701-L880A70
datasheet
Inverter Switching Characteristics
figure 5.
Typical swit ching t imes as a f unct ion of collector current
t = f(I C)
1
t_{d(off )}
t_f
t_d(on)
0,1
IGBT
figure 6.
Typical swit ching t imes as a f unct ion of gate resistor
t = f(R g)
1
0,1
t_r
0,01
0,01
IGBT
t_d(on)
t_{d(off )}
t_r
t_f
0,001
0
20
40
60
80
With an induc tive load at
Tj=
150
°C
V CE =
600
V
V GE =
±15
V
R gon =
4
Ω
R goff =
4
Ω
100
120
140
160
180
200
I C (A)
figure 7.
Typical reverse recovery t ime as a f unction of collector current
t rr = f(I C)
0,8
FWD
t_rr
0,6
t_rr
t_rr
0,4
0,001
0
2
4
6
With an inductive load at
Tj=
150
°C
V CE =
600
V
V GE =
±15
V
IC =
100
A
8
10
12
14
16
18
rg (Ω)
figure 8.
Typical reverse recovery t ime as a f unct ion of IGBT t urn on gat e resist or
t rr = f(R gon)
0,8
0,6
0,4
FWD
t_rr
t_rr
t_rr
0,2
0,2
0
0
20
40
60
80
100 120 140 160 180 200
I C (A)
At
V CE= 600
V
V GE =
±15
V
R gon =
4
Ω
25 °C
T j:
125 °C
150 °C
0
0
2
4
6
At
V CE =
600
V
V GE =
±15
V
IC =
100
A
8
10
12
14
16
18
Rg on (Ω)
25 °C
T j:
125 °C
150 °C
Copyright Vincotech
20
17 Okt. 2016 / Revision 2