30-F212PMA100M701-L880A70 Datasheet, PDF (21/35 Pages) Vincotech – Compact and low inductive design

30-F212PMA100M701-L880A70
datasheet
Inverter Switching Characteristics
figure 9.
Typical recovered charge as a f unction of collector current
Q r = f(I C)
25
20
FWD
Q_r
Q_r
figure 10.
Typical recoved charge as a f unct ion of IGBT t urn on gate resistor
Q r = f(R gon)
25
20
15
15
Q_r
10
10
5
5
FWD
Q_r
Q_r
Q_r
At ⁰ ₀
20
40
60
At
V CE =
600
V
V GE =
±15
V
R gon =
4
Ω
80
100 120 140 160 180 200
I C (A)
25 °C
T j:
125 °C
150 °C
0
0
2
4
6
At
VCE=
600
V
V GE =
±15
V
I C=
100
A
8
10
12
14
16
18
Rgon (Ω)
25 °C
T j:
125 °C
150 °C
figure 11.
Typical peak reverse recovery current current as a f unct ion of collect or current
I RM = f(I C)
80
60
40
FWD
I_RM
I_RM
I_RM
20
0
0
20
40
60
80
100 120 140 160 180 200
I C (A)
At
V CE = 600
V
25 °C
V GE =
±15
V
T j:
125 °C
R gon =
4
Ω
150 °C
figure 12.
Typical peak reverse recovery current as a f unct ion of IGBT t urn on gate resist or
I RM = f(R gon)
250
FWD
200
150
100
50
0
0
2
4
6
At
V CE =
600
V
V GE =
±15
V
IC =
100
A
II_RRMM
I_RM
8
10
12
14
16
18
R _{go n} (Ω)
25 °C
T j:
125 °C
150 °C
Copyright Vincotech
21
17 Okt. 2016 / Revision 2