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30-F212PMA100M701-L880A70 Datasheet, PDF (23/35 Pages) Vincotech – Compact and low inductive design
30-F212PMA100M701-L880A70
datasheet
Inverter Switching Definitions
General conditions
Tj
R gon
= 150 °C
= 4Ω
R goff
= 4Ω
figure 1.
Turn-of f Swit ching Wavef orms & def init ion of t dof f , t Eof f (t Eof f = int egrat ing t ime f or Eof f )
150
%
tdoff
VCE
IGBT
100
VGE 90%
VCE 90%
IC
50
tEoff
IC 1%
0
VGE
figure 2.
Turn-on Swit ching Wavef orms & def init ion of tdon, t Eon (t Eon = int egrating t ime f or Eon)
200
%
IC
150
VCE
100
50
VGE 10%
0
tdon
IC 10%
tEon
VGE
VCE 3%
IGBT
-50
-0,2
0
0,2
0,4
V GE (0%) =
V GE (100%) =
V C (100%) =
I C (100%) =
t doff =
t Eoff =
figure 3.
- 15
V
15
V
600
V
101
A
0,232
μs
0,936
μs
Turn-of f Swit ching Wavef orms & def init ion of t f
125
%
IC
100
fitted
IC 90%
75
0,6
0,8
1
t (µs)
IGBT
VCE
IC 60%
50
IC 40%
25
IC10%
0
-25
0,05
0,1
V C (100%) =
I C (100%) =
tf =
0,15
0,2
600
101
0,113
tf
0,25
0,3
V
A
μs
0,35
0,4
0,45
t ( µs)
-50
3,8
4
4,2
4,4
V GE (0%) =
V GE (100%) =
V C (100%) =
I C (100%) =
t don =
t Eon =
figure 4.
- 15
V
15
V
600
V
101
A
0,169
μs
0,513
μs
Turn-on Swit ching Wavef orms & def init ion of tr
175
%
IC
150
125
VCE
100
IC 90%
75
tr
50
25
0
IC 10%
-25
4,1
4,2
4,3
4,4
4,5
V C (100%) =
I C (100%) =
tr =
600
V
101
A
0,039
μs
4,6
4,8
t (µs)
IGBT
4,6
4,7
t (µs)
Copyright Vincotech
23
17 Okt. 2016 / Revision 2