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30-F212PMA100M701-L880A70 Datasheet, PDF (26/35 Pages) Vincotech – Compact and low inductive design
30-F212PMA100M701-L880A70
datasheet
Brake Switching Characteristics
figure 1.
Typical swit ching energy losses as a f unction of collector current
E = f(I C)
12
IGBT
figure 2.
Typical swit ching energy losses as a f unct ion of gate resistor
E = f(R g)
8
9
Eon
Eon
6
Eoff
Eoff
Eon
6
4
Eoff
3
2
IGBT
Eon
Eon
Eo n
Eoff
Eoff
Eo f f
0
0
20
40
With an induc tive load at
V CE =
600
V
V GE =
±15
V
R gon =
8
Ω
R goff =
8
Ω
60
T j:
80
25 °C
125 °C
150 °C
figure 3.
Typical reverse recovered energy loss as a f unction of collector current
E rec = f(I c)
4
3
100
IC (A)
FWD
Erec
Erec
Erec
2
1
0
0
20
40
With an induc tive load at
V CE =
600
V
V GE =
±15
V
R gon =
8
Ω
60
T j:
80
25 °C
125 °C
150 °C
100
I C (A)
0
0
8
16
With an inductive load at
V CE =
600
V
V GE =
±15
V
IC =
50
A
24
32
25 °C
T j:
125 °C
150 °C
40
Rg (Ω)
figure 4.
Typical reverse recovered energy loss as a f unct ion of gat e resist or
E rec = f(R g)
3
FWD
2,5
Erec
Erec
2
1,5
Erec
1
0,5
0
0
8
16
With an inductive load at
V CE =
600
V
V GE =
±15
V
IC =
50
A
24
32
25 °C
T j:
125 °C
150 °C
40
rg (Ω)
Copyright Vincotech
26
17 Okt. 2016 / Revision 2