30-F212PMA100M701-L880A70 Datasheet, PDF (28/35 Pages) Vincotech – Compact and low inductive design

30-F212PMA100M701-L880A70
datasheet
Brake Switching Characteristics
figure 9.
Typical recovered charge as a f unction of collector current
Q r = f(I C)
10
8
6
4
2
FWD
Q_r
Q_r
Q_r
figure 10.
Typical recoved charge as a f unct ion of IGBT t urn on gate resistor
Q r = f(R gon)
8
6
4
2
FWD
Q_r
Q_r
Q_r
At ⁰ ₀
10
20
30
40
50
60
70
80
90
100
I C (A)
At
V CE =
600
V
25 °C
V GE =
±15
V
T j:
125 °C
R gon =
8
Ω
150 °C
0
0
5
10
At
VCE=
600
V
V GE =
±15
V
I C=
50
A
15
20
25
30
35
Rgon (Ω)
25 °C
T j:
125 °C
150 °C
figure 11.
Typical peak reverse recovery current current as a f unct ion of collect or current
I RM = f(I C)
40
30
FWD
I_RM
I_RM
I_RM
figure 12.
Typical peak reverse recovery current as a f unct ion of IGBT t urn on gate resist or
I RM = f(R gon)
80
60
FWD
20
10
0
0
20
40
At
V CE = 600
V
V GE =
±15
V
R gon =
8
Ω
60
T j:
80
25 °C
125 °C
150 °C
100
I C (A)
40
20
0
0
8
16
At
V CE =
600
V
V GE =
±15
V
IC =
50
A
I_RM
I_RM
I_RM
24
32
25 °C
T j:
125 °C
150 °C
40
R _{go n} (Ω)
Copyright Vincotech
28
17 Okt. 2016 / Revision 2