30-F212PMA100M701-L880A70 Datasheet, PDF (27/35 Pages) Vincotech – Compact and low inductive design

30-F212PMA100M701-L880A70
datasheet
Brake Switching Characteristics
figure 5.
Typical swit ching t imes as a f unct ion of collector current
t = f(I C)
1
IGBT
figure 6.
Typical swit ching t imes as a f unct ion of gate resistor
t = f(R g)
1
t_{d(off )}
t_f
0,1
t_d(on)
0,1
t_r
IGBT
t_{d(off )}
t_d(on)
t_f
t_r
0,01
0
10
20
30
40
50
60
70
80
90
100
I C (A)
With an induc tive load at
Tj=
150
°C
V CE =
600
V
V GE =
±15
V
R gon =
8
Ω
R goff =
8
Ω
figure 7.
Typical reverse recovery t ime as a f unction of collector current
t rr = f(I C)
0,8
FWD
t_rr
0,6
t_rr
t_rr
0,4
0,01
0
8
16
24
With an inductive load at
Tj=
150
°C
V CE =
600
V
V GE =
±15
V
IC =
50
A
figure 8.
Typical reverse recovery t ime as a f unct ion of IGBT t urn on gat e resist or
t rr = f(R gon)
0,8
0,6
32
40
rg (Ω)
FWD
tt_rrrr
t_rr
0,4
0,2
0,2
0
0
10
20
30
40
50
60
70
80
90
100
IC (A)
At
V CE= 600
V
25 °C
V GE =
±15
V
R gon =
8
Ω
T j:
125 °C
150 °C
0
0
8
16
At
V CE =
600
V
V GE =
±15
V
IC =
50
A
24
32
25 °C
T j:
125 °C
150 °C
40
Rg on (Ω)
Copyright Vincotech
27
17 Okt. 2016 / Revision 2