CHA6517 Datasheet, PDF (9/10 Pages) United Monolithic Semiconductors – 6 - 18 GHz High Power Amplifier

X-band High Power Amplifier
CHA6517
Assembly recommendations (one channel)
For thermal and electrical considerations, the chip should be brazed on a metal base plate.
The RF and DC connections should be done according to the following table:
Port
Connection
External capacitor
IN (1, 22)
OUT (7, 16)
VD (6, 8, 10, 11, 12, 13,
15, 17 )
Inductance (Lbonding) = 0.3nH
Inductance (Lbonding) = 0.3nH
Inductance ≤ 1nH
VG (2, 3, 4, 19, 20, 21)
Inductance ≤ 1nH
C1 ~ 22pF
C3~ 1nF
C4~100nF
C2~ 120pF
Ref. : DSCHA6517-8205 - 25 Jun 08
9/10
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Specifications subject to change without notice