CHA6517 Datasheet, PDF (1/10 Pages) United Monolithic Semiconductors – 6 - 18 GHz High Power Amplifier

CHA6517
RoHS COMPLIANT
6 - 18 GHz High Power Amplifier
GaAs Monolithic Microwave IC
Description
The CHA6517 is a Dual channel
monolithic three-stage GaAs high power
amplifier designed for wide band
applications.
This device is manufactured using a UMS
0.25 µm Power pHEMT process, including,
via holes through the substrate and air
bridges.
To simplify the assembly process:
• the backside of the chip is both RF and
DC grounded
• bond pads and back side are gold
plated for compatibility with eutectic die
attach method and thermosonic or
thermocompression bonding process.
Main Features
0.25 µm Power pHEMT Technology
6 – 18 GHz Frequency Range
32dBm Output Power per channel
Compatible for balanced configuration
22dB nominal Gain
Quiescent Bias point : 600mA @ 8V
per channel
Chip size: 4.32 x 3.90 x 0.07 mm
Output Power versus Frequency
Vg
Vd3
INPUT A
INPUT B
OUTPUT A
Vd1
Vd2
Vd3
OUTPUT B
Vg
Vd3
Main Characteristics
Tamb = +25°C (Tamb is the back-side of the chip)
Symbol
F_op
Psat
G_lin
Parameter
Operating frequency range
Saturated output power
Linear gain
Min
Typ Max Unit
6
18 GHz
30
32
dBm
19
22
dB
Ref. : DSCHA6517-8205 - 25 Jun 08
1/10
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : [phone] - Fax : [phone]