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| CHA6517 Datasheet, PDF (6/10 Pages) United Monolithic Semiconductors – 6 - 18 GHz High Power Amplifier | |||
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CHA6517
X-band High Power Amplifier
In test jig Measurements (one channel):
Vd=8V, Id (Quiescient) = 0.6A, Power measurements, CW mode
Temp.=-40°C
Temp.=+25°C
Temp.=+70°C
Output power versus Frequency and Temperature (Pin=+12dBm)
Pin=-5dBm
Pin=+15dBm
Pin=+12dBm
Pin=+17dBm
Pin=+19dBm
Gain versus Frequency and Input power (Temp.=+25°C)
Ref. : DSCHA6517-8205 - 25 Jun 08
6/10
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
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