CHA6517 Datasheet, PDF (2/10 Pages) United Monolithic Semiconductors – 6 - 18 GHz High Power Amplifier

CHA6517
X-band High Power Amplifier
Electrical Characteristics
Tamb = 25°C (2), Vd=8V, Id (Quiescient) = 0.6A, Pu lsed biasing mode, each channel
Symbol
F_op
G_lin
RL_in
RL_out
Psat
PAE_sat
Vd
Id
Vg
Top
Parameter
Operating frequency
Linear gain (Pin=-5dBm)
Input Return Loss
Output Return Loss
Saturated output power (Pin=11dBm)
Power Added Efficiency in saturation
Positive supply voltage
Power supply quiescent current (1)
Negative supply voltage
Operating temperature range (2)
Min Typ Max
6
18
19
22
-14
-8
-8
-4
30
32
15
8
0.6
-0.4
-40
+70
(1) This parameter is fixed by gate voltage Vg
(2) The reference is the back-side of the chip
Unit
GHz
dB
dB
dB
dBm
%
V
A
V
°C
Absolute Maximum Ratings (1)
Symbol
Parameter
Values Unit
Pin (2)
Maximum Input power
19
dBm
Vd (2)
Positive supply voltage without RF power
8.5
V
Id (2)
Positive supply quiescent current
1
A
Pd (2)
Power dissipation
13.5
W
Tj
Junction temperature
175
°C
Tstg
Storage temperature range
-55 to +125 °C
(1) Operation of this device above anyone of these parameters may cause permanent damage.
(2) These values are specified for Tamb = 25°C
Ref. : DSCHA6517-8205 - 25 Jun 08
2/10
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
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Specifications subject to change without notice