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CHA6517 Datasheet, PDF (4/10 Pages) United Monolithic Semiconductors – 6 - 18 GHz High Power Amplifier
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CHA6517
X-band High Power Amplifier
On Wafer Measurements (one channel):
Tamb=25°C, Vd=8V, Id (Quiescient) = 0.6A, Pin=11dBm , pulsed mode:
Output Power versus Frequency
18GHz
12GHz
6GHz
Id versus Pin
Ref. : DSCHA6517-8205 - 25 Jun 08
4/10
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Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
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