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| CHA6517 Datasheet, PDF (5/10 Pages) United Monolithic Semiconductors – 6 - 18 GHz High Power Amplifier | |||
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X-band High Power Amplifier
In test jig Measurements (one channel):
Vd=8V, Id (Quiescient) = 0.6A, S parameters, CW mode:
Temp= +70°C
Temp= -40°C
Temp= +25°C
CHA6517
Gain versus Frequency and Temperature (-40°C, +25°C and +70°C)
dBS22
dBS11
Input and Output Return losses versus Frequency and Temperature
Ref. : DSCHA6517-8205 - 25 Jun 08
5/10
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
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