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| CHA6517 Datasheet, PDF (3/10 Pages) United Monolithic Semiconductors – 6 - 18 GHz High Power Amplifier | |||
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X-band High Power Amplifier
Typical measured characteristics
On Wafer Measurements, S parameters (one channel):
Tamb=25°C, Vd=8V, Id (Quiescient) = 0.6A, pulsed mo de:
CHA6517
Gain
dBS22
dBS11
Input and Output Return losses
Ref. : DSCHA6517-8205 - 25 Jun 08
3/10
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
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