SSM6L13TU_10 Datasheet, PDF (7/8 Pages) Toshiba Semiconductor – TOSHIBA Field-Effect Transistor Silicon P / N Channel MOS Type

Q2 Data
10.0
1.0
|Yfs| - ID
25°C
-25°C
Ta=85°C
0.1
-0.01
1000
CV_{ソDomSー}m=o_ス-n3 SV_接ou_地rce
T^Va^D=^S2⁼5^-°C^3V
P^Tu^als⁼e²te⁵s^℃t
-0.1
-1
-10
ド^Dレ^raiイ^{n c}ン^ur電^re流^{nt I}I^DD (^(AA⁾)
C - VDS
Ciss
100
Com_ソmo_ーn S_スou_接rce_地
Ta =_V2_G5_S°₌C_0V
f = 1_fM₌H₁z_MHz
VGS_T=_a=0 ₂V_5℃
10
-0.1
-1
Coss
Crs s
-10
-100
ドDレraイinン-so・urソceーvスolta間g電e 圧V_DSVDS(V()V)
1000
800
②
600
①
400
PD - Ta
①⁽¹⁾⁽F^:2MR_5.o4_4um基^ntme板^d_×^o2n実_5.F4Rm装^4mb時^o_×^a1r.d6mm)
(2^C5^u.^P4^am^dm^:×⁶⁴⁵2^m5^m.4²⁾mm× 1.6t)
(2): Mounted on ceramic board
Cu(25P.a4mdm:×6245.54mmmm2× 0.8mm)
②Cu ï½¾Paﾗdﾐ:ｯ6ｸ45基mm板²)実 装 時
(25.4mm×25.4mm×0.8t)
Cu Pad :645mm²
200
0
0 20 40 60 80 100 120 140 160
Ambie_周nt _囲tem_温p_度era_Ttu_ar₍e_℃)Ta (°C)
SSM6L13TU
10
IDR - VDS
CV_{ソGomSー}m=0oV_スn S_接our_地ce
Ta^{V G}= ^S2⁼5°⁰C^V
1
P^Tul^ase⁼²te⁵st^℃
25°C
0.1
-25°C
0.01
Ta=85°C
0.001
0
0.2
0.4
0.6
0.8
1
ドDレraイinン–s・ouソrcーe vスol間tag電e 圧V_DSVDS(V()V)
1000
toff
100
tf
ton
10
tr
t - ID
Com_ソmo_ーn S_スou_接rce_地
VVDGDS_VD==_D-01_=t0o-V_1-20.5VV
Ta =^V2^G5^S°⁼C^{0～ -2.5V}
RG T=a4=.72Ω5℃
1
-0.01
-0.1
-1
-10
D^ドra^レin ^イcu^ンrre^電nt^流I_D^ID (⁽A^A)⁾
1000
rth - tw
c
100
10
1
0.001 0.01
b
a
Single pulse
a : Mounted on ceramic board
(25.4mm×25.4mm×0.8mm)
Cu Pad :25.4mm×25.4mm
b : Mounted on FR4 board
(25.4mm×25.4mm×1.6mm)
Cu Pad :25.4mm×25.4mm
c : Mounted on FR4 board
(25.4mm×25.4mm×1.6mm)
Cu Pad :0.45mm×0.8mm×3
0.1
1
10
Pulse width t_w (s)
100 1000
7
2010-07-10