SSM6L13TU_10 Datasheet, PDF (2/8 Pages) Toshiba Semiconductor – TOSHIBA Field-Effect Transistor Silicon P / N Channel MOS Type

SSM6L13TU
Q1 Electrical Characteristics (Ta = 25°C)
Characteristic
Drain-source breakdown voltage
Drain cutoff current
Gate leakage current
Gate threshold voltage
Forward transfer admittance
Drain-source ON-resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Switching time
Turn-on time
Turn-off time
Drain-source forward voltage
Note 2 : Pulse test
Symbol
Test Conditions
Min
V _{(BR) DSS} I_D = 1 mA, V_GS = 0
20
V _{(BR) DSX} I_D = 1 mA, V_GS = − 12 V
10
I_DSS
V_DS = 20 V, V_GS = 0
⎯
I_GSS
V_GS = ± 12 V, V_DS = 0
⎯
V_th
V_DS = 3 V, I_D = 1 mA
0.4
⏐Y_fs⏐
V_DS = 3 V, I_D = 0.6 A
(Note 2) 2.3
I_D = 0.6 A, V_GS = 4.0 V
(Note 2)
⎯
R_{DS (ON)} I_D = 0.4 A, V_GS = 2.5 V
(Note 2)
⎯
I_D = 0.2 A, V_GS = 1.8 V
(Note 2)
⎯
C_iss
V_DS = 10 V, V_GS = 0, f = 1 MHz
⎯
C_oss
V_DS = 10 V, V_GS = 0, f = 1 MHz
⎯
C_rss
V_DS = 10 V, V_GS = 0, f = 1 MHz
⎯
t_on
V_DD = 10 V, I_D = 0.25 A,
⎯
t_off
V_GS = 0 to 2.5 V, R_G = 4.7 Ω
⎯
V_DSF
I_D = − 0.8 A, V_GS = 0 V
(Note 2) ⎯
Typ. Max Unit
⎯
⎯
V
⎯
⎯
⎯
1
μA
⎯
±1
μA
⎯
1.0
V
3.75 ⎯
S
116 143
134 178 mΩ
160 235
268
⎯
pF
44
⎯
pF
34
⎯
pF
9
⎯
ns
16
⎯
− 0.8 − 1.15 V
Q2 Electrical Characteristics (Ta = 25°C)
Characteristic
Drain-source breakdown voltage
Drain cutoff current
Gate leakage current
Gate threshold voltage
Forward transfer admittance
Drain-source ON-resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Switching time
Turn-on time
Turn-off time
Drain-source forward voltage
Note 2: Pulse test
Symbol
Test Conditions
Min Typ. Max Unit
V _{(BR) DSS}
V _{(BR) DSX}
I_D = − 1 mA, V_GS = 0
I_D = − 1 mA, V_GS = + 8 V
− 20 ⎯
⎯
V
− 12 ⎯
⎯
I_DSS
V_DS = − 20 V, V_GS = 0
⎯
⎯ − 10 μA
I_GSS
V_GS = ± 8 V, V_DS = 0
⎯
⎯
±1
μA
V_th
V_DS = − 3 V, I_D = − 1 mA
− 0.3 ⎯
− 1.0
V
⏐Y_fs⏐
V_DS = − 3 V, I_D = − 0.6 A
(Note 2) 1.5
2.5
⎯
S
I_D = − 0.6 A, V_GS = − 4.0 V (Note 2)
⎯
175 234
R_{DS (ON)} I_D = − 0.4 A, V_GS = − 2.5 V (Note 2)
⎯
230 306 mΩ
I_D = − 0.1 A, V_GS = − 1.8 V (Note 2)
⎯
300 460
C_iss
V_DS = − 10 V, V_GS = 0, f = 1 MHz
⎯
250
⎯
pF
C_oss
V_DS = − 10 V, V_GS = 0, f = 1 MHz
⎯
45
⎯
pF
C_rss
V_DS = − 10 V, V_GS = 0, f = 1 MHz
⎯
35
⎯
pF
t_on
V_DD = − 10 V, I_D = − 0.25 A,
t_off
V_GS = 0 to − 2.5 V, R_G = 4.7 Ω
⎯
12
⎯
ns
⎯
18
⎯
V_DSF
I_D = 0.8 A, V_GS = 0 V
(Note 2) ⎯
0.85 1.2
V
2
2010-07-10