SSM6L13TU_10 Datasheet, PDF (4/8 Pages) Toshiba Semiconductor – TOSHIBA Field-Effect Transistor Silicon P / N Channel MOS Type

Q1 Data
2
10 4
ID - VDS
2.5
1.8
1.5
1
VGS=1.2V
Common Source
Ta = 25^ソ°C^{ー ス 接 地}
Pulse t^Te^ast^=25℃
0
0
0.2
0.4
0.6
0.8
1
D_ドra_レin_イ–s_ンou_・rc_ソe _ーvo_スlta_間ge_電圧V_DVSDS (₍V_V)₎
RDS(ON) - VGS
300
CommソonーSoスur接ce 地
Ta = 2T5a°=C25°C
Pulse test
0.6A
200
0.4A
ID=0.2A
100
0
0 1 2 3 4 5 6 7 8 9 10
ゲGaーteト–s・ouソrcーeスvo間lta電ge圧 VV_GG_SS (V(V))
RDS(ON) - ID
300
200
100
0
0
1.8V
2.5V
VGS=4V
Common Source
Ta =_ソ25_ー°C_ス 接 地
PulsTeate=s2t 5 ℃
1
2
ド^Drレ^ainイ^cン^urr電^en流^{t ID}ID^(A(⁾A)
SSM6L13TU
ID - VGS
10
1
0.1
Ta=85°C
0.01
25°C
0.001
0.0001
-25°C
Common Source
VD_ソS =_ー3 _スV _{接 地}
Pul_Vs_De_Ste₌s₃t _V
0
1
2
Gate_ゲ–s_ーou_トrc_・e_ソvo_ーlta_スge_間電V_{圧GS VG}(V_S) _(V)
300
250
RDS(ON) - Ta
C_ソom_ーmo_スn S_接ou_地rce
Pulse test
200
1.8V,0.2A
2.5V,0.4A
150
100
VGS=4V,ID=0.6A
50
0
-60 -40 -20 0 20 40 60 80 100 120 140 160
Ambien_周t t_囲em_温pe_度ra_　tur_Te_a(T_℃a ₎ (°C)
1
Vth - Ta
Coソmーmoスn S接ou地rce
VD_ISD==₁3_mAV
0.8
ID_V=_DS1₌m₃A_V
0.6
0.4
0.2
0
-60 -40 -20 0 20 40 60 80 100 120 140 160
Ambient temperature Ta (°C)
周囲温度　Ta(℃)
4
2010-07-10