SSM6L13TU_10 Datasheet, PDF (5/8 Pages) Toshiba Semiconductor – TOSHIBA Field-Effect Transistor Silicon P / N Channel MOS Type

Q1 Data
10.0
1.0
|Yfs| - ID
25°C
-25°C
Ta=85°C
0.1
0.01
1000
CVDo_ソmSm_{ー=o3nスVS接}our_地ce
ID^V=^D1^S=m³A^V
Pu^Tls^ae⁼t²e⁵st^℃
0.1
1
10
Drain current
ドレイン電流
I_DID
(A)
(A)
C - VDS
Ciss
100
Com_ソmo_ーn S_スou_接rce_地
Ta =_V2_G5_S°₌C_0V
f = 1_fM₌H₁z_MHz
VGS_T=_a=0₂V_5℃
10
Coss
Crs s
0.1
1
10
100
ド^Dレ^raイⁱⁿン^-so・^urソ^ceー^vス^olt間^ag電^e 圧^VDSVDS^(V(⁾V)
SSM6L13TU
10
IDR - VDS
Common Source
ソース接地
VTaG_V=SG=_S25=0V_0°CV
1
Pu^Tls^ae⁼t²e⁵st^℃
D
25°C
G
IDR
0.1
Ta=85°C
S
-25°C
0.01
0.001
0
-0.2 -0.4 -0.6 -0.8
-1
ドレ_Drイ_ainン_–s・_ouソ_rcー_e ス_vo間_lta電_ge圧 _VDV_SDS ₍(_VV₎)
1000
toff
100
tf
t - ID
Com_ソm_ーon_スSo_接urc_地e
VD_VDD=_D1₌0₁V_0V
VTaG_{V=SG2=S50=°C0}to_～2.5_2.V_5V
Ta=25℃
ton
10
tr
1
0.01
0.1
1
10
D^ドra^レin^イcu^ンrr^電en^流t I^I_D^{D (}(A^A))
5
2010-07-10