SSM6L13TU_10 Datasheet, PDF (1/8 Pages) Toshiba Semiconductor – TOSHIBA Field-Effect Transistor Silicon P / N Channel MOS Type

SSM6L13TU
TOSHIBA Field-Effect Transistor Silicon P / N Channel MOS Type
SSM6L13TU
Power Management Switch Applications
High-Speed Switching Applications
• 1.8-V drive
• N–ch , P–ch 2–in–1
• Low ON–resistance: Nch
•
•
: Pch
•
R_DS(ON) = 235 mΩ (max) (@V_GS = 1.8 V)
R_DS(ON) = 178 mΩ (max) (@V_GS = 2.5 V)
R_DS(ON) = 460 mΩ (max) (@V_GS = −1.8 V)
R_DS(ON) = 306 mΩ (max) (@V_GS = −2.5 V)
Q1 Absolute Maximum Ratings (Ta = 25 °C)
Characteristic
Drain-source voltage
Gate-source voltage
Drain current
DC
Pulse
Symbol
V_DS
V_GSS
I_D
I_DP
Rating
Unit
20
V
±12
V
0.8
A
1.6
Q2 Absolute Maximum Ratings (Ta = 25 °C)
Characteristic
Drain-source voltage
Gate-source voltage
Drain current
DC
Pulse
Symbol
V_DS
V_GSS
I_D
I_DP
Rating
Unit
−20
V
±8
V
−0.8
A
−1.6
Unit: mm
2.1±0.1
1.7±0.1
1
6
2
5
3
4
1.Source1
2.Gate1
UF6 ^3.Drain2
4.Source2
5.Gate2
6.Drain1
JEDEC
―
JEITA
―
TOSHIBA
2-2T1B
Weight: 7 mg (typ.)
Absolute Maximum Ratings (Q1 , Q2 Common)
(Ta = 25 °C)
Characteristic
Symbol
Rating
Unit
Power dissipation
P_{D (Note 1)}
500
mW
Channel temperature
T_ch
150
°C
Storage temperature range
T_stg
−55 to 150
°C
Note:
Note 1:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Mounted on an FR4 board (total dissipation)
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm² )
Marking
654
Equivalent Circuit (top view)
6
5
4
KV
Q1
Q2
123
1
2
3
1
2010-07-10