SSM6L13TU_10 Datasheet, PDF (6/8 Pages) Toshiba Semiconductor – TOSHIBA Field-Effect Transistor Silicon P / N Channel MOS Type

Q2 Data
-2
-1
ID - VDS
-10 -4.0 -2.5
-1.8
-1.5
-0₀
-00.0
VGS=-1.2V
ソ^Comー^mス^on接^So地^urce
T^Taa⁼=2²5⁵ ℃^°C
Pulse test
-0.2 -0.4 -0.6 -0.8 -1.0
ドDレrイainン–s・ouソrcーe スvo間lta電ge圧VVDDSS ((VV))
500
400
RDS(ON) - VGS
-0.6A
C_ソom_ーmo_スn S_接ou_地rce
Ta_Ta=₌2₂5₅°C_°C
Pulse test
-0.4A
300
200
ID=-0.1A
100
0
-00 -1 -2 -3 -4 -5 -6 -7 -8 -9 -10
ゲ_Gー_aト_te–・_soソ_urー_ceス_v間_olt電_ag圧_{e V}V_GG_SS (₍V_V)₎
400
350
300
250
200
150
100
50
0
-⁰
RDS(ON) - ID
-1.8V
-2.5V
VGS=-4V
Common Source
Ta_ソ= _ー25°_スC _{接 地}
PuTlase=2te5st℃
-1
-2
Drain current I_D (A)
ドレイン電流 ID (A)
SSM6L13TU
ID - VGS
-10
-1
-0.1
Ta=85°C
-0.01
25°C
-0.001
-0.0001
-00
-25°C
Co_ソmm_ーon_スS_接our_地ce
VD_VSDS=₌-3_-3V_V
Pulse test
-1
-2
Gゲatーe–トso・urソceーvoスlta間ge電圧V_GSVGS(V()V)
500
400
RDS(ON) - Ta
C_ソom_ーm_スon _接Sou_地rce
Pulse test
-1.8V,-0.1A
300
-2.5V,-0.4A
200
VGS=-4V,ID=-0.6A
100
0
-60 -40 -20 0 20 40 60 80 100 120 140 160
Ambie周nt囲te温mp度er　atTuare(℃T)a (°C)
-1
-0.8
Vth - Ta
C_ソom_ーmo_スn S_接ou_地rce
V_IDDS==_--₁3_mV_A
ID_VD=_S-1_=-m₃A_V
-0.6
-0.4
-0.2
-₀0
-60 -40 -20 0 20 40 60 80 100 120 140 160
Ambient temperature Ta (°C)
周囲温度　Ta(℃)
6
2010-07-10