TC55VEM316AXBN40 Datasheet, PDF (5/14 Pages) Toshiba Semiconductor – TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS

TC55VEM316AXBN40,55
AC CHARACTERISTICS AND OPERATING CONDITIONS
(Ta = −40° to 85°C, V_DD = 2.7 to 3.6 V)
READ CYCLE
SYMBOL
PARAMETER
t_RC
t_ACC
t_CO1
t_CO2
t_OE
t_BA
t_COE
t_OEE
t_BE
t_OD
t_ODO
t_BD
t_OH
Read Cycle Time
Address Access Time
Chip Enable( CE1 ) Access Time
Chip Enable(CE2) Access Time
Output Enable Access Time
Data Byte Control Access Time
Chip Enable Low to Output Active
Output Enable Low to Output Active
Data Byte Control Low to Output Active
Chip Enable High to Output High-Z
Output Enable High to Output High-Z
Data Byte Control High to Output High-Z
Output Data Hold Time
TC55VEM316AXBN
40
55
MIN MAX MIN MAX
40

55


40

55

40

55

40

55

25

30

40

55
5

5

0

0

5

5


20

25

20

25

20

25
10

10

UNIT
ns
WRITE CYCLE
TC55VEM316AXBN
SYMBOL
PARAMETER
40
55
UNIT
MIN MAX MIN MAX
t_WC
Write Cycle Time
40

55

t_WP
Write Pulse Width
30

40

t_CW
Chip Enable to End of Write
35

45

t_BW
Data Byte Control to End of Write
35

45

t_AS
Address Setup Time
t_WR
Write Recovery Time
0

0

ns
0

0

t_ODW
R/W Low to Output High-Z

20

25
t_OEW
R/W High to Output Active
0

0

t_DS
Data Setup Time
20

25

t_DH
Data Hold Time
0

0

Note: t_OD, t_ODO, t_BD and t_ODW are specified in time when an output becomes high impedance, and are not judged depending on
an output voltage level.
2002-07-23 5/14