TC55VEM316AXBN40 Datasheet, PDF (3/14 Pages) Toshiba Semiconductor – TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS

TC55VEM316AXBN40,55
OPERATING MODE
MODE
Read
Write
Output Deselect
Standby
* = don't care
H = logic high
L = logic low
CE1 CE2 OE R/W LB
L
H
L
H
L
L
H
L
H
H
L
H
L
H
L
L
H
*
L
L
L
H
*
L
H
L
H
*
L
L
L
H
H
H
L
L
H
H
H
H
L
H
H
H
L
H
*
*
*
*
*
L
*
*
*
*
*
*
*
H
UB
I/O1~I/O8
L Output
L High-Z
H Output
L Input
L High-Z
H Input
L ^High-Z
L ^High-Z
H ^High-Z
* ^High-Z
* ^High-Z
H ^High-Z
I/O9~I/O16
Output
Output
High-Z
Input
Input
High-Z
High-Z
High-Z
High-Z
High-Z
High-Z
High-Z
POWER
I_DDO
I_DDO
I_DDO
I_DDO
I_DDO
I_DDO
I_DDO
I_DDO
I_DDO
I_DDS
I_DDS
I_DDS
MAXIMUM RATINGS
SYMBOL
RATING
V_DD
Power Supply Voltage
V_IN
Input Voltage
V_I/O
Input/Output Voltage
P_D
Power Dissipation
T_solder
Soldering Temperature (10s)
T_stg
Storage Temperature
T_opr
Operating Temperature
*: −2.0 V when measured at a pulse width of 20ns
VALUE
−0.3~4.2
−0.3*~4.2
−0.5~V_DD + 0.5
0.6
260
−55~125
−40~85
UNIT
V
V
V
W
°C
°C
°C
DC RECOMMENDED OPERATING CONDITIONS (Ta = −40° to 85°C)
SYMBOL
PARAMETER
V_DD
Power Supply Voltage
V_IH
Input High Voltage
V_DD = 2.3 V~2.7 V
V_DD = 2.7 V~3.6 V
V_IL
Input Low Voltage
V_DH
Data Retention Supply Voltage
*: −2.0 V when measured at a pulse width of 20ns
MIN
2.3
2.0
2.2
−0.3*
1.5
TYP
MAX
UNIT

3.6
V

V_DD + 0.3
V

V_DD × 0.24
V

3.6
V
2002-07-23 3/14