TC9WMB4FU Datasheet, PDF (13/17 Pages) Toshiba Semiconductor – CMOS Digital Integrated Circuits Silicon Monolithic 4096-Bit (512 × 8-Bit) 2-Wire Serial EEPROM

TC9WMB4FU
EEPROM Characteristics (GND = 0 V, 2.3 V ≤ V_CC ≤ 2.7 V, T_opr = −40 to 85°C)
Characteristics
Write time
Rewrite endurance
Data retention time
Symbol
t_WR
N_EW
t_RET
Test Condition
⎯
⎯
⎯
Min Typ.
⎯
⎯
1 × 10⁵ ⎯
10
⎯
Max Unit
12
ms
⎯ Times
⎯ Years
EEPROM Characteristics (GND = 0 V, 2.7 V < V_CC ≤ 5.5 V, T_opr = −40 to 85°C)
Characteristics
Write time
Rewrite endurance
Data retention time
Symbol
t_WR
N_EW
t_RET
Test Condition
⎯
⎯
⎯
Min Typ.
⎯
⎯
1 × 10⁵ ⎯
10
⎯
Max Unit
10
ms
⎯ Times
⎯ Years
Capacitance Characteristics (Ta = 25°C)
Characteristics
Input capacitance
Output capacitance
Symbol
C_IN
C_O
Test Condition
⎯
⎯
Typ. Unit
V_CC (V)
5
4
pF
5
3
pF
13
2007-10-19