TC9WMB4FU Datasheet, PDF (12/17 Pages) Toshiba Semiconductor – CMOS Digital Integrated Circuits Silicon Monolithic 4096-Bit (512 × 8-Bit) 2-Wire Serial EEPROM

Electrical Characteristics
TC9WMB4FU
DC Characteristics (GND = 0 V, T_opr = −40 to 85°C)
Characteristics
Input current
Output leakage current
Low-level output voltage
Quiescent supply current
Supply current during read
Supply current during write
*: f = 100 kHz
Symbol
I_LI
I_LO
V_OL
I_CC1
I_CC2
I_CC3
Test
Condition
1.8 ≤ V_CC < 2.3 V 2.3 ≤ V_CC ≤ 3.6 V 4.5 ≤ V_CC ≤ 5.5 V
Unit
Min
Max
Min
Max
Min
Max
⎯
⎯
±1
⎯
±1
⎯
±1
μA
⎯
⎯
±1
⎯
±1
⎯
±1
μA
I_OL = 3.2 mA
⎯
⎯
⎯
0.4
⎯
0.4
V
I_OL = 1.5 mA
⎯
0.5
⎯
⎯
⎯
⎯
⎯
⎯
5
⎯
5
⎯
5
μA
f = 400 kHz
⎯
0.2*
⎯
0.3
⎯
0.5
mA
f = 400 kHz
⎯
⎯
⎯
1.5
⎯
2.5
mA
AC Characteristics (GND = 0 V, T_opr = −40 to 85°C)
Test Conditions
Input rise/fall time
Input/output testing voltage
Output load
20 ns
0.5 × V_CC
100 pF + 1 kΩ pull-up resistor
SDA
V_CC
R_L = 1 kΩ
C_L = 100 pF
Characteristics
SCL clock frequency
SCL clock low time
SCL clock high time
Noise suppression time
SDA output delay
Bus free time
Start condition hold time
Start condition setup time
Data input hold time
Data input setup time
SCL, SDA input rise time
SCL, SDA input fall time
Stop condition setup time
SDA output hold time
Symbol
f_SCL
t_LOW
t_HIGH
t_I
t_AA
t_BUF
t_HD.STA
t_SU.STA
t_HD.DAT
t_SU.DAT
t_R
t_F
t_SU.STO
t_DH
1.8 ≤ V_CC < 2.3 V 2.3 ≤ V_CC ≤ 3.6 V 4.5 ≤ V_CC ≤ 5.5 V
Unit
Min
Max
Min
Max
Min
Max
0
100
0
400
0
400 kHz
4.7
⎯
1.2
⎯
1.2
⎯
μs
4.0
⎯
0.6
⎯
0.6
⎯
μs
⎯
100
⎯
50
⎯
50
ns
0.1
4.5
0.1
0.9
0.1
0.9
μs
4.7
⎯
1.2
⎯
1.2
⎯
μs
4.0
⎯
0.6
⎯
0.6
⎯
μs
4.7
⎯
0.6
⎯
0.6
⎯
μs
0
⎯
0
⎯
0
⎯
ns
250
⎯
200
⎯
200
⎯
ns
⎯
1.0
⎯
0.3
⎯
0.3
μs
⎯
0.3
⎯
0.3
⎯
0.3
μs
4.7
⎯
0.6
⎯
0.6
⎯
μs
100
⎯
50
⎯
50
⎯
ns
12
2007-10-19