TC9WMB4FU Datasheet, PDF (11/17 Pages) Toshiba Semiconductor – CMOS Digital Integrated Circuits Silicon Monolithic 4096-Bit (512 × 8-Bit) 2-Wire Serial EEPROM

Absolute Maximum Ratings (Note) (GND = 0 V)
TC9WMB4FU
Characteristics
Symbol
Rating
Unit
Supply voltage
Input voltage
Output voltage
Power dissipation
Storage temperature
Operating temperature
V_CC
V_IN
V_OUT
P_D
T_stg
T_opr
−0.3 to 7.0
V
−0.3 to V_CC + 0.3
V
−0.3 to V_CC + 0.3
V
300 (25°C)
mW
−55 to 125
°C
−40 to 85
°C
Note: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or even
destruction.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Operating Ranges (Note) (GND = 0 V, T_opr = −40 to 85°C)
Characteristics
Symbol
Test Condition
Min Max Unit
Supply voltage (for reading)
Supply voltage (for writing)
High-level input voltage
Low-level input voltage
Operating frequency
V_CC
V_CC
V_IH
V_IL
f_SCL
⎯
⎯
2.3 V ≤ V_CC ≤ 5.5 V
1.8 V ≤ V_CC < 2.3 V
2.3 V ≤ V_CC ≤ 5.5 V
1.8 V ≤ V_CC < 2.3 V
2.3 V ≤ V_CC ≤ 5.5 V
1.8 V ≤ V_CC < 2.3 V
1.8 5.5
V
2.3 5.5
V
0.7 ×
V_CC
V_CC
V
0.8 ×
V_CC
V_CC
0
0.3 ×
V_CC
V
0
0.2 ×
V_CC
0
400
kHz
0
100
Note: The operating ranges must be maintained to ensure the normal operation of the device.
Unused inputs must be tied to either VCC or GND.
11
2007-10-19