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DS50PCI401_13 Datasheet, PDF (8/36 Pages) Texas Instruments – DS50PCI401 2.5 Gbps / 5.0 Gbps 4 Lane PCI Express Repeater with Equalization and De-Emphasis
DS50PCI401
SNLS292J – JUNE 2009 – REVISED APRIL 2013
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PRSNT#
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Table 6. Receiver Detect Pins for A and B ports (LVCMOS inputs) (continued)
ENRXDET
X
RXDETA/B
X
Function
Power down mode: Input termination 50Ω. Associated output channels off. Part in power
saving mode.
USING RXDETA/B IN A PCIe ENVIRONMENT
In order for upstream and downstream PCIe subsystems to communicate in a cabling environment, the PCIe
specification includes several auxiliary or sideband signals to manage system-level functionality or
implementation. Similar methods are used in backplane applications, but the exact implementation falls outside
the PCIe standard. Initial communication from the downstream subsystem to the upstream subsystem is done
with the CPRSNT# auxiliary signal. The CPRSNT# signal is asserted Low by the downstream componentry after
the "Power Good" condition has been established. This mechanism allows for the upstream subsystem to
determine whether the power is good within the downstream subsystem, enable the reference clock, and initiate
the Link Training Sequence.
CPWRON
CPERST#
CPRSNT#
CREFCLK
0V
CPRSNT# to RESET Removal
5 ms (min)
0V
RESET Removed and
REFCLK Stable
0V
Figure 2. Typical PCIe System Timing
The signals shown in the graphic could be easily replicated within the downstream subsystem and used to
control the RXDETA/B inputs on the DS50PCI401. Often an onboard microcontroller will be used to handle
events like power-up, power-down, power saving modes, and hot insertion. The microcontroller would use the
same information to determine when to enable and disable the DS50PCI401 input termination. In applications
that require SMBus control, the microcontroller could also delay any response to the upstream subsystem to
allow sufficient time to correctly program the DS50PCI401 and other devices on the board.
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
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