BQ24735_17 Datasheet, PDF (8/46 Pages) Texas Instruments – 1- to 4-Cell Li+ Battery SMBus Charge Controller for Supporting Turbo Boost Mode With N-Channel Power MOSFET Selector

bq24735
SLUSAK9B – SEPTEMBER 2011 – REVISED APRIL 2015
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Electrical Characteristics (continued)
4.5 V ≤ V_VCC ≤ 24 V, 0°C ≤ T_J ≤ 125°C, typical values are at T_A = 25°C, with respect to GND (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN TYP MAX
BATTERY DEPLETION COMPARATOR (BAT_DEPL) [1]
V_{BATDEPL_FALL}
Battery depletion falling threshold,
percentage of voltage regulation limit, V_SRN
falling
ChargeOption() bit [12:11] = 00
ChargeOption() bit [12:11] = 01
ChargeOption() bit [12:11] = 10
ChargeOption() bit [12:11] = 11 (Default)
55.53% 59.19%
58.68% 62.65%
62.17% 66.55%
66.06% 70.97%
63.5%
67.5%
71.5%
77%
ChargeOption() bit [12:11] = 00
225
305
400
V_{BATDEPL_RHYST}
Battery depletion rising hysteresis, V_SRN
rising
ChargeOption() bit [12:11] = 01
ChargeOption() bit [12:11] = 10
240
325
430
255
345
450
ChargeOption() bit [12:11] = 11 (Default)
280
370
490
t_{BATDEPL_RDEG}
Battery depletion rising deglitch (specified Delay to turn off ACFET and turn on BATFET during
by design)
LEARN cycle
600
BATTERY LOWV COMPARATOR (BAT_LOWV)
V_{BATLV_FALL}
Battery LOWV falling threshold
V_{BATLV_RHYST}
Battery LOWV rising hysteresis
I_BATLV
Battery LOWV charge current limit
THERMAL SHUTDOWN COMPARATOR (TSHUT)
V_SRN falling
V_SRN rising
10-mΩ current-sensing resistor
2.4
2.5
2.6
200
0.5
T_SHUT
Thermal shutdown rising temperature
Temperature rising
155
T_{SHUT_HYS}
Thermal shutdown hysteresis, falling
Temperature falling
20
ILIM COMPARATOR
V_{ILIM_FALL}
ILIM as CE falling threshold
V_{ILIM_RISE}
ILIM as CE rising threshold
LOGIC INPUT (SDA, SCL)
V_ILIM falling
V_ILIM rising
60
75
90
90
105
120
V_{IN_ LO}
Input low threshold
V_{IN_ HI}
Input high threshold
I_{IN_ LEAK}
Input bias current
LOGIC OUTPUT OPEN DRAIN (ACOK, SDA)
V=7V
0.8
2.1
–1
1
V_{OUT_ LO}
Output saturation voltage
I_{OUT_ LEAK}
Leakage current
ANALOG INPUT (ACDET, ILIM)
5-mA drain current
V=7V
500
–1
1
I_{IN_ LEAK}
Input bias current
PWM OSCILLATOR
V=7V
–1
1
F_SW
PWM switching frequency
F_SW+
PWM increase frequency
F_SW–
PWM decrease frequency
BATFET GATE DRIVER (BATDRV)
ChargeOption() bit [9] = 0 (Default)
ChargeOption() bit [10:9] = 11
ChargeOption() bit [10:9] = 01
600
750
900
665
885 1100
465
615
765
I_BATFET
V_BATFET
R_{BATDRV_LOAD}
BATDRV charge pump current limit
Gate drive voltage on BATFET
Minimum load resistance between
BATDRV and SRN
V_BATDRV – V_SRN when V_SRN > UVLO
40
60
5.5
6.1
6.5
500
R_{BATDRV_OFF}
BATDRV turnoff resistance
ACFET GATE DRIVER (ACDRV)
I = 30 µA
5
6.2
7.4
I_ACFET
V_ACFET
R_{ACDRV_LOAD}
ACDRV charge pump current limit
Gate drive voltage on ACFET
Minimum load resistance between ACDRV
and CMSRC
V_ACDRV – V_CMSRC when V_VCC > UVLO
40
60
5.5
6.1
6.5
500
R_{ACDRV_OFF}
V_{ACFET_LOW}
ACDRV turnoff resistance
ACDRV turnoff when Vgs voltage is low
(specified by design)
I = 30 µA
5
6.2
7.4
5.9
PWM HIGH-SIDE DRIVER (HIDRV)
R_{DS_HI_ON}
R_{DS_HI_OFF}
High-side driver turnon resistance
High-side driver turnoff resistance
V_BTST – V_PH = 5.5 V, I = 10 mA
V_BTST – V_PH = 5.5 V, I = 10 mA
6
10
0.65
1.3
UNIT
mV
ms
V
mV
A
°C
°C
mV
mV
V
V
μA
mV
μA
μA
kHz
kHz
kHz
µA
V
kΩ
kΩ
μA
V
kΩ
kΩ
V
Ω
Ω
8
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