TCM8002_08 Datasheet, PDF (7/25 Pages) Texas Instruments – DATA PROCESSOR FOR CELLULAR TELEPHONE

TCM8002
DATA PROCESSOR FOR CELLULAR TELEPHONE
SLWS008C − SEPTEMBER 1994 − REVISED JUNE 1996
electrical characteristics over recommended operating conditions, V_DD = 5 V (unless otherwise
noted)
VOH
VOL
VIT ₊
VIT _−
Vhys
IOZ
IIL
IIH
IO
PARAMETER
High-level output voltage
Low-level output voltage
Positive-going input threshold voltage
Negative-going input threshold voltage
Hysteresis (VIT ₊ − VIT _−)
High-impedance output current
Low-level input current
High-level input current
Pullup output current
IDD Supply current with 2.56-MHz crystal
TEST CONDITIONS
IOH = − 2 mA
IOL = 2 mA
VI = VDD or VSS
VI = VSS
VI = VDD
VI = VSS
Default mode
Low-power mode
Low-power mode, SAT off
MIN
VDD −0.8
0.2 VDD
0.1 VDD
− 7.2
TYP
− 14.84
3.6
2.8
2.5
MAX
0.5
0.7 VDD
0.3 VDD
± 10
−1
1
− 24.47
UNIT
V
V
V
V
V
µA
µA
µA
µA
mA
timing requirements over recommended ranges of operating conditions (see Figure 1)
tsu1
th1
tsu2
th2
tc
tc(er)
tc(or)
Setup time, CS low before DCLK↑
Hold time, CS low after DCLK↓
Setup time, DATAIN before DCLK↑
Hold time, DATAIN after DCLK↑
DCLK clock period (nominal)
DCLK clock period, Read start bit − Event Register
DCLK clock period, Read start bit − Other Register
Period that CS must be high between read or write operations
MIN MAX
300
300
300
300
1
2
1
100
UNIT
ns
ns
ns
ns
µs
µs
µs
ns
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