MSP430F249-EP_14 Datasheet, PDF (61/82 Pages) Texas Instruments – MIXED SIGNAL MICROCONTROLLER

MSP430F249-EP
MIXED SIGNAL MICROCONTROLLER
2008
electrical characteristics over recommended operating free-air temperature (unless otherwise
noted) (continued)
flash memory
PARAMETER
V_CC(PGM/
ERASE)
Program and erase supply voltage
TEST
CONDITIONS
VCC
MIN TYP MAX UNIT
2.2
3.6 V
f_FTG
I_PGM
I_ERASE
t_CPT
t_CMErase
Flash timing generator frequency
Supply current from DV_CC during program
Supply current from DV_CC during erase
Cumulative program time
Cumulative mass erase time
Program/erase endurance
See Note 1
See Note 2
257
2.7 V/ 3.6 V
2.7 V/ 3.6 V
2.7 V/ 3.6 V
2.7 V/ 3.6 V 200
10⁴
476 kHz
3
5 mA
3
7 mA
4 ms
ms
10⁵
cycles
t_Retention
Data retention duration
T_J = 25°C
100
years
t_Word
Word or byte program time
35
t_{Block, 0}
Block program time for first byte or word
30
t_{Block, 1-63}
t_{Block, End}
Block program time for each additional byte or word
Block program end-sequence wait time
See Note 3
21
6
t_FTG
t_{Mass Erase}
Mass erase time (see Note 4)
10593
t_{Seg Erase}
Segment erase time
4819
NOTES:
1. The cumulative program time must not be exceeded when writing to a 64-byte flash block. This parameter applies to all programming
methods: individual word/byte write and block write modes.
2. The mass erase duration generated by the flash timing generator is at least 11.1ms ( = 5297×1/f_FTG,max = 5297×1/476kHz). To
achieve the required cumulative mass erase time the Flash Controller’s mass erase operation can be repeated until this time is met.
(A worst case minimum of 19 cycles are required).
3. These values are hardwired into the Flash Controller’s state machine (t_FTG = 1/f_FTG).
4. To erase the complete code area the mass erase has to be performed once with a dummy address in the range of the lower 64kB
Flash addresses and once with the dummy address in the upper 64kB Flash addresses.
5. Additional Flash retention documentation located in application report (SLAA392)
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