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BQ24070_14 Datasheet, PDF (6/33 Pages) Texas Instruments – System Power-Path Management IC
bq24070, bq24071
SLUS694G – MARCH 2006 – REVISED DECEMBER 2014
www.ti.com
Electrical Characteristics (continued)
over junction temperature range (0°C ≤ TJ ≤ 125°C) and the recommended supply voltage range (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX UNIT
OUT PIN - BATTERY SUPPLEMENT MODE
VBSUP1
VBSUP2
Enter battery supplement mode
(battery supplements OUT current VI(BAT)> 2 V
in the presence of input source
Exit battery supplement mode
VI(BAT)> 2 V
VI(OUT)
≤ VI(BAT)
– 60 mV
V
VI(OUT)
≥ VI(BAT)
– 20 mV
OUT PIN - SHORT CIRCUIT
IOSH1
BAT to OUT short-circuit recovery
RSHIN
IN to OUT short-circuit limit
BAT PIN CHARGING – PRECHARGE
Current source between BAT to OUT for
short-circuit recovery to
VI(OUT) ≤ VI(BAT) –200 mV
VI(OUT) ≤ 1 V
10
mA
500
Ω
V(LOWV)
Precharge to fast-charge transition
threshold
Voltage on BAT
2.9
3
3.1
V
TDGL(F)
Deglitch time for fast-charge to
precharge transition(4)
IO(PRECHG)
Precharge range
V(PRECHG)
Precharge set voltage
BAT PIN CHARGING - CURRENT REGULATION
tFALL = 100 ns, 10 mV overdrive,
VI(BAT) decreasing below threshold
1 V < VI(BAT) < V(LOWV), t < t(PRECHG),
IO(PRECHG) = (K(SET) × V(PRECHG))/ RSET
1 V < VI(BAT) < V(LOWV), t < t(PRECHG)
22.5
ms
10
150
mA
225
250
275
mV
IO(BAT)
RPBAT
V(SET)
Battery charge current range(5)
BAT to OUT pullup
Battery charge current set
voltage (6)
K(SET)
Charge current set factor, BAT
USB MODE INPUT CURRENT LIMIT
VI (BAT) > V(LOWV), Mode = High
IOUT(BAT) = (K(SET) × V(SET) / RSET),
VI(OUT) > VO(OUT-REG) + V(DO-MAX)
VI (BAT)< 1 V
Voltage on ISET1, VVCC ≥ 4.35 V,
VI(OUT)- VI(BAT) > V(DO-MAX),
VI(BAT) > V(LOWV)
100 mA ≤ IO(BAT) ≤ 1.5 A
10 mA ≤ IO(BAT) ≤ 100 mA(7)
100
1000
1500
mA
1000
Ω
2.47
2.50
2.53
V
375
425
450
300
450
600
I(USB)
USB input port current range
ISET2 = Low
ISET2 = High
80
90
100
mA
400
500
BAT PIN CHARGING VOLTAGE REGULATION, VO (BAT-REG) + V (DO-MAX) < VCC, ITERM < IBAT(OUT) ≤ 1 A
Battery charge voltage
4.2
V
VO(BAT-REG)
Battery charge voltage regulation TA = 25°C
accuracy
–0.5%
–1%
0.5%
1%
CHARGE TERMINATION DETECTION
I(TERM)
V(TERM)
TDGL(TERM)
Charge termination detection
range
VI(BAT) > V(RCH),
I(TERM) = (K(SET) × V(TERM))/ RSET
10
Charge termination set voltage,
VI(BAT) > V(RCH) , Mode = High
230
measured on ISET1
VI(BAT) > V(RCH) , Mode = Low
95
Deglitch time for termination
detection
tFALL = 100 ns, 10 mV overdrive,
ICHG increasing above or decreasing below
threshold
150
mA
250
270
mV
100
130
22.5
ms
TEMPERATURE SENSE COMPARATORS
VLTF
VHTF
ITS
TDGL(TF)
High voltage threshold
Low voltage threshold
Temperature sense current source
Temp fault at V(TS) > VLTF
Temp fault at V(TS) < VHTF
Deglitch time for temperature fault
detection (4)
R(TMR) = 50 kΩ, VI(BAT) increasing or
decreasing above and below;
100-ns fall time, 10-mv overdrive
2.465
0.485
94
2.500
0.500
100
22.5
2.535
V
0.515
V
106
μA
ms
(4) All deglitch periods are a function of the timer setting and is modified in DPPM or thermal regulation modes by the percentages that the
program current is reduced.
(5) When input current remains below 2 A, the battery charging current may be raised until the thermal regulation limits the charge current.
(6) For half-charge rate, V(SET) is 1.25 V ± 25 mV.
(7) Specification is for monitoring charge current through the ISET1 pin during voltage regulation mode, not for a reduced fast-charge level.
6
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