BQ24070_14 Datasheet, PDF (5/33 Pages) Texas Instruments – System Power-Path Management IC

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bq24070, bq24071
SLUS694G – MARCH 2006 – REVISED DECEMBER 2014
7.4 Thermal Information
THERMAL METRIC⁽¹⁾
bq2407x
RHL
UNIT
20 PINS
R_θJA
R_θJC(top)
R_θJB
ψ_JT
ψ_JB
R_θJC(bot)
Junction-to-ambient thermal resistance
Junction-to-case (top) thermal resistance
Junction-to-board thermal resistance
Junction-to-top characterization parameter
Junction-to-board characterization parameter
Junction-to-case (bottom) thermal resistance
40.1
42.0
16.6
°C/W
0.7
16.6
4.2
(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.
7.5 Electrical Characteristics
over junction temperature range (0°C ≤ T_J ≤ 125°C) and the recommended supply voltage range (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX UNIT
INPUT BIAS CURRENTS
I_CC(SPLY)
I_CC(SLP)
Active supply current, VCC
Sleep current (current into BAT
pin)
V_VCC > V_VCC(min)
V_IN < V_(BAT)
2.6 V ≤ V_I(BAT) ≤ V_O(BAT-REG),
Excludes load on OUT pin
1
2
mA
2
5
I_CC(IN-STDBY)
Input standby current
I_{CC(BAT-STDBY)}
BAT standby current
I_IB(BAT)
Charge done current, BAT
OUT PIN-VOLTAGE REGULATION
V_I(IN) ≤ 6V, Total current into IN pin with chip
disabled, Excludes all loads, CE=LOW, after
t_(CE-HOLDOFF) delay
Total current into BAT pin with input present
and chip disabled;
Excludes all loads, CE=LOW,
after t_(CE-HOLDOFF) delay,
0°C ≤ T_J ≤ 85°C⁽¹⁾
Charge DONE, input supplying the load
200
μA
45
65
1
5
V_O(OUT-REG)
Output regulation
voltage
bq24070
bq24071
V_I(IN) ≥ 4.4 V + V_DO
V_I(IN) ≥ 6 V + V_DO
OUT PIN – DPPM REGULATION
V_(DPPM-SET)
DPPM set point⁽²⁾
V_DPPM-SET < V_OUT
I_(DPPM-SET)
DPPM current source
Input present
SF
DPPM scale factor
V_(DPPM-REG) = V_(DPPM-SET) × SF
OUT PIN – FET (Q1, Q2) DROP-OUT VOLTAGE R_DS(on))
V_(INDO)
IN-to-OUT dropout voltage⁽³⁾
V_I(IN) ≥ V_CC(min), Mode = High,
I_I(IN) = 1 A, (I_O(OUT)+ I_O(BAT)), or no input
V_(BATDO)
BAT-to-OUT dropout voltage
(discharging)
V_{I (BAT)} ≥ 3 V, I_I(BAT)= 1.0 A, V_CC < V_I(BAT)
2.6
95
1.139
4.4
6.0
100
1.150
300
40
4.5
V
6.3
3.8
V
105
μA
1.162
475
mV
100
(1) This includes the quiescent current for the integrated LDO.
(2) V_(DPPM-SET) is scaled up by the scale factor for controlling the output voltage V_(DPPM-REG).
(3) V_DO(max), dropout voltage is a function of the FET, R_DS(on), and drain current. The dropout voltage increases proportionally to the
increase in current.
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