BQ29312_15 Datasheet, PDF (5/39 Pages) Texas Instruments – FOUR CELL LITHIUM-ION

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bq29312
SLUS546E – MARCH 2003 – REVISED MARCH 2005
ELECTRICAL CHARACTERISTICS (Continued)
T_A = 25°C, C_(REG) = 4.7 µF, BAT = 14 V (unless otherwise noted)
PARAMETER
TEST CONDITION
OVER LOAD (OL) AND SHORT CIRCUIT (SC) DETECTION
V_OL
∆V_OL
V_HYS(OL)
V_(SC)
OL detection threshold range, typical⁽¹⁾
OL detection threshold program step
OL detection threshold hysteresis
SC detection threshold range, typical⁽²⁾
Charge
Discharge
∆V_(SC)
SC detection threshold program step
Charge
Discharge
V_HYS(SC) SC detection threshold hysteresis
V_{(OL_acr)} OL detection threshold accuracy⁽¹⁾
V_{(SC_acr)} SC detection threshold accuracy⁽²⁾
FET DRIVE CIRCUIT
Charge and Discharge
Discharge
Charge and Discharge
V_OL = 50 mV (min)
V_OL = 100 mV
V_OL = 205 mV (max)
V_SC = 100 mV (min)
V_SC = 200 mV
V_SC = 475 mV (max)
V_(FETON)
Output voltage, charge and discharge FETs
on
V_(FETOND)= V_(BAT)– V_(DSG)
VGS connect 1 MΩ
V_(FETONC)=V_(PACK)– V_(CHG)
VGS connect 1 MΩ
BAT= 20 V
PACK = 20 V
V_(ZCHG)
V_(FETOFF)
ZVCHG clamp voltage
Output voltage, charge and discharge FETs
off
V_(FETOFF)= V_(PACK)– V_(DSG)
V_(FETOFF)=V_(BAT)– V_(CHG)
t_r
Rise time
C_L = 4700 pF
t_f
Fall time
THERMISTOR DRIVE
C_L = 4700 pF
PACK= 4.5 V
PACK= 16 V
BAT = 16 V
V_DSG :10%–90%
V_CHG :10%–90%
V_DSG :90%–10%
V_CHG :90%–10%
r_DS(on)
LOGIC
TOUT pass-element series resistance
I_O = –1 mA at TOUT pin, rds_(ON) = (V_REG– V_O (TOUT))/1 mA,
T_A = –25°C to 85°C
R_(PUP)
Internal pullup resistance
V_OL
Logic level output voltage
XALERT
SDATA, SCLK,
XALERT, I_O = 200 µA,
SDATA, I_O = 50 µA,
OD I_O = 1 mA,
T_A = –25°C to 85°C
T_A = –25°C to 85°C
T_A = –25°C to 85°C
T_A = –25°C to 85°C
T_A = –25°C to 85°C
(1) See OL register for setting detection threshold
(2) See SC register for setting detection threshold
MIN
–50
7
100
–100
40
40
90
184
80
180
426
12
12
3.3
60
6
NOM
5
10
25
–25
50
50
100
205
100
200
475
15
15
3.5
40
40
40
40
50
100
10
MAX UNIT
–205 mV
mV
13 mV
475
mV
–475
mV
60 mV
60
110 mV
226
120
220 mV
523
18
V
18
3.7
V
0.2
V
0.2
200
µs
200
200
µs
200
100
Ω
200
kΩ
20
0.2
0.4
V
0.6
5