BQ24140_14 Datasheet, PDF (5/39 Pages) Texas Instruments – Integrated Dual-Input Switch-Mode One-Cell Li-Ion Charger with Full USB Compliance and USB-OTG Support

bq24140
www.ti.com
SLUSAO5 – OCTOBER 2011
ELECTRICAL CHARACTERISTICS (continued)
Circuit of Figure 1, V_BUS = 5V, HZ_MODE=0, OPA_MODE=0, CD=0, T_J = –40°C–125°C and T_J = 25°C for typical values
PARAMETER
TEST CONDITIONS
MIN TYP MAX UNIT
Deglitch time for weak battery threshold
Hysteresis for V_LOWV
DIS, SLRST and OTG PIN LOGIC LEVEL
Rising voltage, 2-mV over drive, t_RISE = 100 ns
Battery voltage falling
30
ms
100
mV
V_IL
Input low threshold level
V_IH
Input high threshold level
CHARGE TERMINATION DETECTION
0.4
V
1.3
V
I_TERM
Termination charge current
V_VBAT > V_OREG-V_RCH , V_BUS > V_SLP, R_SNS = 68 mΩ,
Programmable
50
400 mA
Deglitch time for charge termination
Regulation accuracy for termination
current across R_SNS V_{IREG_TERM} = I_OTERM
× R_SNS
BAD ADAPTOR DETECTION
Both rising and falling, 2-mV overdrive, t_RISE, t_FALL = 100 ns
3.4 mV ≤ V_{IREG_TERM} ≤ 6.8mV
6.8 mV < V_{IREG_TERM} ≤ 13.6 mV
13.6mV < V_{IREG_TERM} ≤ 30 mV
-35%
–12.5%
–6%
30
ms
35%
12.5
%
6%
V_IN(MIN)
Input voltage lower limit
Deglitch time for VBUS rising above
V_IN(MIN)
Hysteresis for V_IN(MIN)
I_SHORT
Current source to GND
T_INT
Detection interval
INPUT BASED DYNAMIC POWER MANAGEMENT
Bad adaptor detection
Rising voltage, 2-mV overdrive, t_RISE = 100 ns
Input voltage rising
During bad adaptor detection
Input power source detection
3.7
3.8 4.0
V
30
ms
100
200 mV
20
30 40 mA
2
S
V_{IN_LOW}
The threshold when input based DPM
loop kicks in
Charge mode, programmable
4.2
4.76
V
DPM loop kick-in threshold tolerance
–2%
+2%
INPUT CURRENT LIMITING
I_{IN_LIMIT}
Input current limit
VREF BIAS REGULATOR
I_IN = 100mA
I_IN = 500mA
T_J = 0°C–125ºC
88
93 98
mA
T_J = –40ºC–125ºC
86
93 98
T_J = 0ºC–125ºC
T_J = –40ºC–125ºC
450
475 500
mA
440
475 500
V_REF
Internal bias regulator voltage
V_REF output short current limit
BATTERY RECHARGE THRESHOLD
V_IN > V_REF, I_VREF = 1 mA, C_VREF = 1 μF
5.5
6.5
V
30
mA
V_RCH
Recharge threshold voltage
Deglitch time
Below V_OREG
V_VBAT decreasing below threshold, t_FALL = 100 ns, 10-mV
overdrive
90
120 160 mV
130
ms
STAT OUTPUT
V_OL
Low-level output saturation voltage,
STAT pin
I_O = 10 mA, sink current
0.55
V
High-level leakage current for STAT
Voltage on STAT pin is 5V
1 μA
LED OUTPUT
V_{LED_MIN}
Minimum LED operating voltage
ILED1 = L, ILED0 = L
2.5
V
0
I_LED
LED current, programmable
ILED1 = L, ILED0 = H
ILED1 = H, ILED0 = L
1.35
mA
2.7
ILED1 = H, ILED0 = H
5.4
LED current accuracy
–20%
+20%
V_DO
Drop-out voltage of LED
T_ON
Turn on time for current source
(10%–90%)
VBAT = 2.5 V
100 200 mV
100
μs
T_OFF
Turn off time for current source
(90%–10%)
100
μs
I²C BUS LOGIC LEVELS AND TIMING CHARTERISTICS
Copyright © 2011, Texas Instruments Incorporated
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